Light-emitting semiconductor device having sub-structures for reducing defects of dislocation therein

• US 8,866,161 B2
• Filed: 12/08/2011
• Issued: 10/21/2014
• Est. Priority Date: 06/24/2008
• Status: Active Grant

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: Chan, Shih-Hsiung, Huang, Shih-Cheng, TU, PO-MIN, Lin, Wen-Yu, Wu, Peng-Yi, YEH, YING-CHAO
• Primary Examiner(s): MITCHELL, JAMES M
• Application Number:
  US13/314,186
• Publication Number:
  US 20120080715A1
• Time in Patent Office: 1,048 Days
• Field of Search: 257/13, 257/79
• US Class Current: 257/79
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02656 Special treatments
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Claims

1. A structure of semiconductor device, comprising:

a first semiconductor layer;

an intermediate layer on a surface of said first semiconductor layer, wherein said intermediate layer has a dopant which is a mixture of Mg and Si, and a doping concentration of the mixture of said Mg and said Si in said intermediate layer ranges from 1.0×

10²⁰ cm<sup>−

3</sup> and 5.0×

10²¹ cm<sup>−

3</sup>;

a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and

a semiconductor light emitting device on said second semiconductor layer.

2. The structure of semiconductor device according to claim 1, further comprising a plurality of sets of substructures between said second semiconductor layer and said semiconductor light emitting device.

3. The structure of semiconductor device according to claim 1, wherein the materials of said first semiconductor layer, said intermediate layer, and said second semiconductor layer are Group III nitride compound semiconductor or Al_xIn_yGa_1-x-yN where 0≦

x and y≦

1.

4. The structure of semiconductor device according to claim 3, wherein said intermediate layer is used to decrease defects inside the semiconductor light emitting device.

5. The structure of semiconductor device according to claim 1, wherein said first semiconductor layer is a semiconductor structure with multiple layers.

6. The structure of semiconductor device according to claim 1, wherein said second semiconductor layer is a semiconductor structure with multiple layers.