Gas barrier film, electronic device including the same, gas barrier bag, and method for producing gas barrier film
First Claim
1. A gas barrier film comprising a gas barrier layer in direct contact with each of both main surfaces of a plastic film selected from the group of PEN, PET, PI, fluorine resin, PC, PAR, PES, and heat-resistive liquid crystal films,wherein the gas barrier layer is an SiCNFH layer, an SiOCNH layer or an SiCNH layer deposited by Cat-CVD,the SiCNFH layer satisfying conditions of
0.01<
- I(SiH)/I(SiN)<
0.03,
0.00<
I(CH)/I(SiN)<
0.02,
0.05<
I(NH)/I(SiN)<
0.08, and
0.05<
I(CF)/I(SiN)<
0.25;
the SiOCNH layer satisfying conditions of
0.1<
I(SiH)/I(NH)<
0.5,
0.0<
I(CH)/I(NH)<
0.2,
10<
I(SiN)/I(NH)<
20, and
2<
I(SiO2)/I(NH)<
5; and
the SiCNH layer satisfying conditions of
0.01<
I(SiH)/I(SiN)<
0.03,
0.00<
I(CH)/I(SiN)<
0.02 and
0.05<
I(NH)/I(SiN)<
0.08;
where the “
I”
represents peak intensity of Fourier transform infrared spectroscopy related to the atomic bond shown in the parentheses after the “
I”
.
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Accused Products
Abstract
A gas barrier film in which a gas barrier layer deposited by catalyst CVD in contact with each of both main surfaces of a plastic film is an SiCNFH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3; an SiOCNH layer satisfying conditions of 0.1<I(SiH)/I(NH)<0.9, 0.0<I(CH)/I(NH)<0.3, 8<I(SiN)/I(NH)<20, and 2<I(SiO2)/I(NH)<8; or an SiCNH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07 and 0.04<I(NH)/I(SiN)<0.08. Here, the “I” represents peak intensity of Fourier transform infrared spectroscopy related to an atomic bond shown in the parentheses after the “I”.
11 Citations
9 Claims
-
1. A gas barrier film comprising a gas barrier layer in direct contact with each of both main surfaces of a plastic film selected from the group of PEN, PET, PI, fluorine resin, PC, PAR, PES, and heat-resistive liquid crystal films,
wherein the gas barrier layer is an SiCNFH layer, an SiOCNH layer or an SiCNH layer deposited by Cat-CVD, the SiCNFH layer satisfying conditions of
0.01<- I(SiH)/I(SiN)<
0.03,
0.00<
I(CH)/I(SiN)<
0.02,
0.05<
I(NH)/I(SiN)<
0.08, and
0.05<
I(CF)/I(SiN)<
0.25;the SiOCNH layer satisfying conditions of
0.1<
I(SiH)/I(NH)<
0.5,
0.0<
I(CH)/I(NH)<
0.2,
10<
I(SiN)/I(NH)<
20, and
2<
I(SiO2)/I(NH)<
5; andthe SiCNH layer satisfying conditions of
0.01<
I(SiH)/I(SiN)<
0.03,
0.00<
I(CH)/I(SiN)<
0.02 and
0.05<
I(NH)/I(SiN)<
0.08;where the “
I”
represents peak intensity of Fourier transform infrared spectroscopy related to the atomic bond shown in the parentheses after the “
I”
. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- I(SiH)/I(SiN)<
Specification