Application specific implant system and method for use in solar cell fabrications

• US 8,871,619 B2
• Filed: 06/11/2009
• Issued: 10/28/2014
• Est. Priority Date: 06/11/2008
• Status: Active Grant

• Current Assignee: Intevac
• Original Assignee: Intevac
• Inventors: Adibi, Babak, Murrer, Edward S.
• Primary Examiner(s): Diallo, Mamadou
• Assistant Examiner(s): GARCIA, JOANNIE A
• Application Number:
  US12/482,947
• Publication Number:
  US 20090309039A1
• Time in Patent Office: 1,965 Days
• Field of Search: 438/57, 438/514, 257/439, 257/E31.038, 257/E21.334
• US Class Current: 438/514
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/072 the potential barriers being only of the PN heterojunction type
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150 kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of “dead layers” and improves the contact resistance, thereby increasing the efficiency of a solar cell.

Claims

1. A method of fabricating a semiconductor device comprising:

doping photo-receptive regions within a substrate to a first concentration;

doping the photo-receptive regions to a second concentration larger than the first concentration to form gridlines, wherein the gridlines extend from topmost surfaces of the photo-receptive regions down into the substrate; and

coupling metal fingers to the gridlines,

wherein the photo-receptive regions and the gridlines are doped using a system

comprising a single-species delivery module; and

,

further comprising implanting a seed on each of the gridlines before coupling the gridlines to metallic fingers.

2. The method of claim 1, wherein the substrate is doped separately from other substrates.

3. The method of claim 1, wherein forming the gridlines comprises exposing the substrate through a mask displaced from a surface of the substrate to an ion beam containing a dopant, wherein the mask has openings sized to widths of the gridlines.

4. The method of claim 1, wherein forming the gridlines comprises exposing the substrate through a mask coupled to a surface of the substrate to an ion beam containing a dopant, wherein the mask has openings adjacent to where the gridlines are to be formed.

5. The method of claim 1, wherein forming the gridlines comprises shaping a beam containing dopants to a width of the gridlines and directing the beam onto the photo-receptive regions.

6. The method of claim 5, wherein directing the beam comprises scanning the beam across the photo-receptive regions to sequentially form the gridlines.

7. The method of claim 5, wherein directing the beam comprises generating the beam to simultaneously form the gridlines.

8. The method of claim 1, wherein the first concentration is less than 1E15 per square centimeter.

9. The method of claim 1, wherein the photo-receptive regions have a resistance of at least 100 ohms per square.

10. The method of claim 1, wherein the gridlines have a resistance of about 10 to 30 ohms per square.

11. The method of claim 1, wherein the gridlines are no more than 200 microns wide.

12. The method of claim 1, wherein the gridlines are no more than 5 millimeters apart.

13. The method of claim 1, further comprising annealing the substrate at between 400 and 500 degrees Centigrade.

14. The method of claim 1, further comprising forming a contact on a back surface of the substrate.

15. A method of fabricating a solar cell comprising:

doping photo-receptive regions within a substrate to a first concentration using an ion beam having an energy of no more than 150 kV;

doping the photo-receptive regions to a second concentration larger than the first concentration using the ion beam to form gridlines, wherein the gridlines extend from topmost surfaces of the photo-receptive regions down into the substrate; and

coupling metal fingers to the gridlines,

wherein the substrate is 156 mm×

156 mm, the photo-receptive regions are doped using a system comprising a single-species delivery module, and a throughput of the system is at least 1,000 wafers per hour; and

,

further comprising implanting a seed on each of the gridlines before coupling the gridlines to metallic fingers.