Nitride semiconductor device

  • US 8,872,227 B2
  • Filed: 02/22/2012
  • Issued: 10/28/2014
  • Est. Priority Date: 08/27/2009
  • Status: Active Grant
First Claim
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1. A nitride semiconductor device comprising:

  • a semiconductor substrate having an upper surface and a lower surface opposing the upper surface; and

    a nitride semiconductor layer formed on the upper surface of the semiconductor substrate, whereinthe semiconductor substrate includes a normal region and an interface current block region surrounding the normal region,the interface current block region extends from the upper surface of the semiconductor substrate,the nitride semiconductor layer includes an element region and an isolation region surrounding the element region,the element region is formed over the normal region, andthe interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.

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