Resin composition for encapsulating semiconductor and semiconductor device

• US 8,883,883 B2
• Filed: 05/28/2010
• Issued: 11/11/2014
• Est. Priority Date: 06/03/2009
• Status: Expired due to Fees

• Current Assignee: Sumitomo Bakelite Company Limited
• Original Assignee: Sumitomo Bakelite Company Limited
• Inventors: Wada, Masahiro
• Primary Examiner(s): Gulakowski, Randy
• Assistant Examiner(s): NGUYEN, HA S
• Application Number:
  US13/322,037
• Publication Number:
  US 20120061861A1
• Time in Patent Office: 1,628 Days
• Field of Search: 252/534, 528/151, 528/153, 528/155, 528/212, 528/218, 523/400, 523/457, 525/523, 525/534, 525/457
• US Class Current: 523/400
• CPC Class Codes: C08G 59/621 Phenols
• CPC Class Codes: C08G 59/688 containing phosphorus
• CPC Class Codes: C08L 63/00 Compositions of epoxy resins; Compositions of derivatives of epoxy resins
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48011 Length
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20656 : larger or equal to 5000 microns less than 6000 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns

Abstract

Disclosed is a resin composition for encapsulating a semiconductor including a phenol resin (A) having one or more components containing a component (A1) composed of a polymer having a first structural unit and a second structural unit, an epoxy resin (B), and an inorganic filler (C). Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Claims

1. A resin composition for encapsulating a semiconductor comprising a phenol resin (A) having one or more components containing a component (A1) composed of a polymer having a structural unit represented by the following general formula (1) and a structural unit represented by the following general formula (2);

an epoxy resin (B); and

an inorganic filler (C),

2. The resin composition for encapsulating a semiconductor according to claim 1, wherein said component (A1) is composed of one or more polymers, and in the measurement by the field desorption mass spectrometry, the total relative intensity of polymers corresponding to said component (A1) is equal to or more than 10% and equal to or less than 80%, based on the total relative intensity of said phenol resin (A).

3. The resin composition for encapsulating a semiconductor according to claim 1, wherein said phenol resin (A) further comprises a component (A2) composed of a polymer having the structural unit represented by said general formula (1) but without having the structural unit represented by said general formula (2).

4. The resin composition for encapsulating a semiconductor according to claim 1, wherein said phenol resin (A) further comprises a component (A3) composed of a polymer having the structural unit represented by said general formula (2) but without having the structural unit represented by said general formula (1).

5. The resin composition for encapsulating a semiconductor according to claim 1, wherein the ratio of the total number of structural units represented by said general formula (1) to the total number of structural units represented by said general formula (2) is from 30/70 to 95/5, based on the total amount of said phenol resin (A).

6. The resin composition for encapsulating a semiconductor according to claim 1, wherein, in the structural unit represented by said general formula (2), R6 is a methyl group, and b is from 1 to 3.

7. The resin composition for encapsulating a semiconductor according to claim 1, wherein the softening point of said phenol resin (A) is equal to or more than 63 degrees centigrade and equal to or less than 85 degrees centigrade.

8. The resin composition for encapsulating a semiconductor according to claim 1, wherein the area ratio of binuclear components in said phenol resin (A) is equal to or less than 20% according to the gel permeation chromatography (GPC) method in terms of standard polystyrene.

9. The resin composition for encapsulating a semiconductor according claim 1,

wherein said phenol resin (A) is included as a curing agent in the resin composition, and

wherein said phenol resin (A) is contained in an amount of equal to or more than 20% by mass and equal to or less than 100% by mass, based on the total curing agent.

10. The resin composition for encapsulating a semiconductor according to claim 1, wherein said epoxy resin (B) is at least one epoxy resin selected from the group consisting of a biphenyl type epoxy resin, a bisphenol type epoxy resin, a stilbene type epoxy resin, an anthracenediol type epoxy resin, a phenol novolac type epoxy resin, a cresol novolac type epoxy resin, a triphenol methane type epoxy resin, an alkyl-modified triphenol methane type epoxy resin, a phenol aralkyl type epoxy resin having a phenylene skeleton, a phenol aralkyl type epoxy resin having a biphenylene skeleton, a naphthol aralkyl type epoxy resin having a phenylene skeleton, a dihydroxy naphthalene type epoxy resin, an epoxy resin obtained by glycidyl etherification of dimers of dihydroxy naphthalene, a novolac type epoxy resin having a methoxynaphthalene skeleton, triglycidyl isocyanurate, monoallyl diglycidyl isocyanurate and a dicyclopentadiene-modified phenol type epoxy resin.

11. The resin composition for encapsulating a semiconductor according to claim 1, further comprising a curing accelerator (D).

12. The resin composition for encapsulating a semiconductor according to claim 11, wherein said curing accelerator (D) comprises at least one curing accelerator selected from the group consisting of a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound.

13. The resin composition for encapsulating a semiconductor according to claim 1, further comprising a compound (E) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring.

14. The resin composition for encapsulating a semiconductor according to claim 1, further comprising a coupling agent (F).

15. The resin composition for encapsulating a semiconductor according to claim 14, wherein said coupling agent (F) comprises a silane coupling agent having a secondary amino group.

16. The resin composition for encapsulating a semiconductor according to claim 1, further comprising an inorganic flame retardant (G).

17. The resin composition for encapsulating a semiconductor according to claim 16, wherein said inorganic flame retardant (G) comprises metal hydroxide or complex metal hydroxide.

18. A semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor according to claim 1.