Semiconductor device and manufacturing method thereof
First Claim
Patent Images
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode over a substrate;
forming a first insulating layer over the gate electrode;
forming a semiconductor layer over the first insulating layer;
forming a source electrode and a drain electrode over the semiconductor layer;
forming a second insulating layer over the source electrode, the drain electrode, and the semiconductor layer;
forming a contact hole in the second insulating layer to expose the first insulating layer; and
forming a third insulating layer over the second insulating layer so that the third insulating layer is in contact with the first insulating layer in the contact hole.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide conductor containing hydrogen and oxygen vacancy, and a barrier layer which prevents diffusion of hydrogen and oxygen between an oxide conductive layer and the oxide semiconductor layer. The oxide conductive layer and the oxide semiconductor layer are electrically connected to each other through the barrier layer.
133 Citations
13 Claims
-
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating layer over the gate electrode; forming a semiconductor layer over the first insulating layer; forming a source electrode and a drain electrode over the semiconductor layer; forming a second insulating layer over the source electrode, the drain electrode, and the semiconductor layer; forming a contact hole in the second insulating layer to expose the first insulating layer; and forming a third insulating layer over the second insulating layer so that the third insulating layer is in contact with the first insulating layer in the contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method for manufacturing a semiconductor device, the method comprising the steps of:
-
forming a gate electrode over a substrate; forming a first insulating layer over the gate electrode; forming a semiconductor layer over the first insulating layer; forming a second insulating layer over the semiconductor layer; forming a contact hole in the second insulating layer to expose the first insulating layer; forming a source electrode and a drain electrode over the second insulating layer and the semiconductor layer; and forming a third insulating layer over the source electrode, the drain electrode, and the second insulating layer so that the third insulating layer is in contact with the first insulating layer in the contact hole. - View Dependent Claims (9, 10, 11, 12, 13)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei, Akimoto, Kengo
-
Primary Examiner(s)Blum, David S
-
Application NumberUS14/028,560Publication NumberTime in Patent Office427 DaysField of Search438/158, 257/E21.411, 257/E29.296US Class Current438/158CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/45 Ohmic electrodesH01L 29/66742 Thin film unipolar transistorsH01L 29/7869 having a semiconductor body...
