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Selecting PA bias levels of RF PA circuitry during a multislot burst

  • US 8,913,971 B2
  • Filed: 11/28/2011
  • Issued: 12/16/2014
  • Est. Priority Date: 04/20/2010
  • Status: Active Grant
First Claim
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1. Circuitry comprising:

  • power amplifier (PA) control circuitry adapted to;

    select one PA bias level of radio frequency (RF) PA circuitry during one slot of a multislot transmit burst from the RF PA circuitry, such that the RF PA circuitry has one output power level during the one slot and has a next output power level during an adjacent next slot of the multislot transmit burst;

    if the one output power level exceeds the next output power level by more than a power drop limit, then maintain the one PA bias level during the adjacent next slot; and

    if the one output power level significantly exceeds the next output power level, but by less than the power drop limit, then select a next PA bias level, which is less than the one PA bias level, during the adjacent next slot; and

    PA bias circuitry adapted to provide the one PA bias level and the next PA bias level.

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