Magnetic field sensing element combining a circular vertical hall magnetic field sensing element with a planar hall element

• US 8,922,206 B2
• Filed: 09/07/2011
• Issued: 12/30/2014
• Est. Priority Date: 09/07/2011
• Status: Active Grant

• Current Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Original Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Inventors: Friedrich, Andreas P., Foletto, Andrea, Pepka, Gary T.
• Primary Examiner(s): LEDYNH, BOT L
• Application Number:
  US13/226,694
• Publication Number:
  US 20130057257A1
• Time in Patent Office: 1,210 Days
• Field of Search: 324/251, 324/247, 324/207.2, 324/207.14, 324/117.H, 324/249, 324/252
• US Class Current: 324/251
• CPC Class Codes: G01R 33/0052 Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips devices based on galvano-magnetic effect or the like H10N50/85
• CPC Class Codes: G01R 33/072 Constructional adaptation of the sensor to specific applications
• CPC Class Codes: G01R 33/077 Vertical Hall-effect devices
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices

Abstract

A magnetic field sensor includes a circular vertical Hall (CVH) sensing element and at least one planar Hall element. The CVH sensing element has contacts arranged over a common implant region in a substrate. In some embodiments, the at least one planar Hall element is formed as a circular planar Hall (CPH) sensing element also having contacts disposed over the common implant region. A CPH sensing element and a method of fabricating the CPH sensing element are separately described.

Claims

1. A magnetic field sensor, comprising:

a semiconductor substrate having first and second parallel major surfaces;

a plurality of vertical Hall elements arranged as a circular vertical Hall (CVH) structure, wherein each one of the plurality of vertical Hall elements is arranged upon a common circular implant region in the first major surface of the semiconductor substrate, wherein the plurality of vertical Hall elements is configured to generate a respective plurality of x-y output signals responsive to a magnetic field having a direction component in an x-y plane parallel to the first major surface of the semiconductor substrate, the x-y plane having an x-direction and a y-direction orthogonal to the x-direction;

a plurality of planar Hall elements disposed upon the semiconductor substrate, wherein the plurality of planar Hall elements is arranged in a circular planar Hall (CPH) structure, wherein each one of the plurality of planar Hall elements is arranged upon the common circular implant region of the CVH structure or upon a separate common implant region of the CPH structure, wherein the plurality of planar Hall elements is configured to generate a plurality of z output signals responsive to a magnetic field having a direction component in a z direction orthogonal to the x-y plane; and

a processing circuit disposed upon the semiconductor substrate, coupled to receive a signal representative of the plurality of x-y output signals, coupled to receive a signal representative of the plurality of z output signals, configured to generate one or more of an x-y angle signal representative of an angle of the direction component in the x-y-plane, or an x-y magnitude signal representative of a magnitude of the direction component in the x-y plane, and configured to generate a z magnitude signal representative of a magnitude of the direction component in the z direction.

2. The magnetic field sensor of claim 1, wherein the common circular implant region comprises n-type doping material and wherein the substrate is comprised of p-type material.

3. The magnetic field sensor of claim 2, wherein the semiconductor substrate comprises a silicon substrate.

4. The magnetic field sensor of claim 1, wherein each one of the plurality of planar Hall elements comprises a respective group of planar Hall element contacts, wherein the processing circuit is operable to process the plurality of planar Hall elements using a plurality of groups of the planar Hall element contacts to generate the signal representative of the plurality of z output signals.

5. The magnetic field sensor of claim 4, wherein the processing circuit is further operable to process each group of planar Hall element contacts in a multiplexed arrangement, wherein different ones of the planar Hall element contacts of each one of the plurality of planar Hall elements provide different ones of the plurality of z output signals at different times.

6. The magnetic field sensor of claim 4, wherein each one of the plurality of vertical Hall elements comprises a respective group of vertical Hall element contacts, wherein the processing circuit is operable to process the plurality of vertical Hall elements using a plurality of groups of vertical Hall element contacts to generate the signal representative of the plurality of x-y output signals.

7. The magnetic field sensor of claim 6, wherein the processing circuit is operable to process each group of vertical Hall element contacts in a multiplexed arrangement, wherein different ones of the vertical Hall element contacts of each one of the plurality of vertical Hall elements provide different ones of the plurality of x-y output signals at different times.

8. The magnetic field sensor of claim 6, wherein the processing circuit comprises a z direction component processor coupled to receive the signal representative of the plurality of z output signals and configured to generate a first intermediate signal responsive to the direction component of the magnetic field in the z direction.

9. The magnetic field sensor of claim 8, wherein the first intermediate signal comprises a DC signal component having a DC signal value responsive to a magnitude of the direction component of the magnetic field in the z direction, wherein the processing circuit is operable to generate the z magnitude signal indicative of the magnitude of the direction component of the magnetic field in the z direction responsive to the DC signal value.

10. The magnetic field sensor of claim 8, wherein the processing circuit further comprises an x-y direction component processor coupled to receive the signal representative of the plurality of x-y output signals and configured to generate a second intermediate signal responsive to the direction component of the magnetic field in the x-y plane.

11. The magnetic field sensor of claim 10, wherein the second intermediate signal comprises an AC signal component having a phase responsive to an angle of the direction component of the magnetic field in the x-y plane and having a magnitude responsive to a magnitude of the direction component of the magnetic field in the x-y plane, wherein the processing circuit is operable to generate the x-y angle signal indicative of the angle of the direction component of the magnetic field in the x-y plane in response to the phase of the AC signal component.

12. The magnetic field sensor of claim 11, wherein the processing circuit is further operable to generate the x-y magnitude signal indicative of the magnitude of the direction component of the magnetic field in the x-y plane in response to the magnitude of the AC signal component.

13. The magnetic field sensor of claim 10, wherein the z direction component processor comprises a low pass filter coupled to receive a signal representative of the first intermediate signal.

14. The magnetic field sensor of claim 10, wherein the x-y direction component processor comprises:

a bandpass filter coupled to receive a signal representative of the second intermediate signal and configured to generate a filtered signal; and

a counter circuit coupled to receive the filtered signal, coupled to receive a clock signal, and configured to compare a phase of the clock signal with a phase of the filtered signal.

15. The magnetic field sensor of claim 14, wherein the x-y direction component processor further comprises an amplitude detector coupled to receive the filtered signal and configured to detect an amplitude of the filtered signal to generate an x-y magnitude signal representative of a magnitude of the direction component of the magnetic field in the x-y plane.

16. The magnetic field sensor of claim 15, wherein the amplitude detector comprises a rectifier coupled to a low pass filter.

17. The magnetic field sensor of claim 15, further comprising a combining processor coupled to receive the z magnitude signal, the x-y angle signal, and the x-y magnitude signal, and configured to combine the signals to generate a signal representative of a magnitude of the magnetic field along its pointing direction in three dimensions.

18. The magnetic field sensor of claim 15, further comprising a combining processor coupled to receive at least two of the z magnitude signal, the x-y angle signal, or the x-y magnitude signal and configured to format the at least two signals into a format comprising at least one of a SENT format, an I2C format, or a pulse width modulated (PWM) format.

19. The magnetic field sensor of claim 1, wherein each one of the plurality of planar Hall elements of the CPH structure comprises a respective group of planar Hall element contacts, wherein ones of the plurality of planar Hall elements share planar Hall element contacts with other ones of the plurality of planar Hall elements.

20. The magnetic field sensor of claim 1, wherein the common circular implant region of the CVH structure and the common implant region of the CPH structure are concentrically disposed upon the substrate.

21. The magnetic field sensor of claim 1, wherein each one of the plurality of planar Hall elements of the CPH structure is arranged upon the common circular implant region of the CVH structure.