Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrate
First Claim
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1. A three-dimensional semiconductor device, comprising:
- an electrode structure comprising a plurality of electrodes disposed at a plurality of levels one above the other in the device such that the electrode structure is three-dimensional;
a plurality of active patterns each extending vertically through the electrode structure,wherein respective ones of the electrodes are disposed on opposite sides of each of the active patterns; and
information storage elements disposed between the electrodes of the electrode structure and the plurality of active patterns,wherein one of the electrodes disposed on one of the opposite sides of each of the active patterns is electrically isolated in the device from one of the electrodes disposed on the other of the opposite sides of the active pattern.
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Abstract
A three-dimensional semiconductor device comprises active patterns arranged two-dimensionally on a substrate, electrodes arranged three-dimensionally between the active patterns, and memory regions arranged three-dimensionally at intersecting points defined by the active patterns and the electrodes. Each of the active patterns is used as a common current path for an electrical connection to two different memory regions that are formed at the same height from the substrate.
16 Citations
17 Claims
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1. A three-dimensional semiconductor device, comprising:
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an electrode structure comprising a plurality of electrodes disposed at a plurality of levels one above the other in the device such that the electrode structure is three-dimensional; a plurality of active patterns each extending vertically through the electrode structure, wherein respective ones of the electrodes are disposed on opposite sides of each of the active patterns; and information storage elements disposed between the electrodes of the electrode structure and the plurality of active patterns, wherein one of the electrodes disposed on one of the opposite sides of each of the active patterns is electrically isolated in the device from one of the electrodes disposed on the other of the opposite sides of the active pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A three-dimensional semiconductor device, comprising:
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a two-dimensional array of active patterns arranged on a substrate; electrodes interposed between the active patterns, and wherein a plurality of the electrodes are disposed at each of a plurality of levels one above the other on the substrate such that the electrodes constitute a structure that is three-dimensional; and memory regions located at points where the active patterns are closest to the electrodes, respectively, wherein each of the active patterns provides a common path for current to two of the memory regions disposed at the same level as one another above the substrate. - View Dependent Claims (16, 17)
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Specification