Method for polishing silicon wafer and polishing liquid therefor

• US 8,932,952 B2
• Filed: 03/23/2011
• Issued: 01/13/2015
• Est. Priority Date: 04/30/2010
• Status: Active Grant

• Current Assignee: Sumco Corporation
• Original Assignee: Sumco Corporation
• Inventors: Ogata, Shinichi, Tanimoto, Ryuichi, Yamasaki, Ichiro, Mikuriya, Shunsuke
• Primary Examiner(s): Vinh, Lan
• Assistant Examiner(s): Lu, Jiong-Ping
• Application Number:
  US13/641,546
• Publication Number:
  US 20130032573A1
• Time in Patent Office: 1,392 Days
• US Class Current: 438/692
• CPC Class Codes: B24B 37/044 characterised by the composition of the lapping agent
• CPC Class Codes: B24B 37/08 for double side lapping
• CPC Class Codes: B24B 37/245 Pads with fixed abrasives
• CPC Class Codes: B24B 37/28 for double side lapping of plane surfaces
• CPC Class Codes: H01L 21/02024 Mirror polishing

Abstract

Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled.

Claims

1. A method for polishing silicon wafers comprising the steps of:

eliminating a native oxide film formed on a silicon wafer by using an alkaline aqueous solution containing free abrasive grains as a primary polishing liquid;

simultaneously rough polishing a surface and a rear surface of the silicon wafer with a double-sided polisher having a carrier plate in which the silicon wafer is housed, an upper surface plate in which a hard abrasive cloth is pasted on a lower surface, and a lower surface plate in which the hard abrasive cloth is pasted on a top surface, wherein the upper surface plate and the lower surface plate hold the carrier plate respectively from above and below therebetween, so as to relatively rotate the silicon wafer and the hard abrasive cloth while supplying a secondary polishing liquid in which hydroxyethyl cellulose is added to an alkaline aqueous solution with no free abrasive grains, to the hard abrasive cloth; and

applying final polishing on at least the rough polished surface of the silicon wafer, wherein;

the hard abrasive cloth has Shore-D hardness of 70 to 90 and a compressibility of 1 to 5%,

a polishing rate of the silicon wafer in the rough polishing is 0.05 to 1 μ

m per minute, and

the final polishing is carried out with a soft abrasive cloth and is performed with a third polishing liquid containing free abrasive grains.

2. The method for polishing silicon wafers according to claim 1, wherein the water-soluble polymer is one type or several types from among non-ionic system polymers and monomers, or one type or several types from among anionic system polymers and monomers.

3. The method for polishing silicon wafers according to claim 2, wherein the water-soluble polymer is hydroxyethyl cellulose.

4. The method for polishing silicon wafers according to claim 3, wherein the concentration of the hydroxyethyl cellulose in the polishing liquid is 0.1 ppm to 1000 ppm.

5. The method for polishing silicon wafers according to claim 1, wherein

the alkaline aqueous solution is adjusted to pH8 to pH13, and

the alkaline aqueous solution is the alkaline aqueous solution to which any of basic ammonium salt, basic potassic salt, and basic sodium salt is added as an alkaline agent, or an alkaline carbonate aqueous solution, or an alkaline aqueous solution to which an amine is added.

6. The method for polishing silicon wafers according to claim 1, wherein the abrasive cloth is composed of a nonwoven cloth made of polyester, or is made of polyurethane.

7. The method for polishing silicon wafers according to claim 1, wherein polishing is carried out such that a thickness of the silicon wafer after the rough polishing is made thicker than a thickness of the carrier plate.

8. The method for polishing silicon wafers according to claim 1, further comprising:

adjusting the concentration of the hydroxyethyl cellulose to be from 0.1 ppm to 1000 ppm, and

controlling an ROA of the silicon wafer to be from −

110 nm to +390 nm in 1 mm notation.

9. A method for polishing silicon wafers comprising the steps of:

rough polishing at least the surface serving as a surface to be polished between a surface and a rear surface of the silicon wafer so as to relatively rotate a silicon wafer and an abrasive cloth; and

applying final polishing on at least the rough polished surface of the silicon wafer after the rough polishing, the method wherein

the rough polishing is split into a first-step polishing which is carried out while supplying a first-step polishing liquid in which a water-soluble polymer is added to an alkaline aqueous solution with no free abrasive grains to the abrasive cloth, and a second-step polishing which is carried out while supplying a second-step polishing liquid in which a water-soluble polymer is added to an alkaline aqueous solution with no free abrasive grains to the abrasive cloth after the first-step polishing, and

concentration of the water-soluble polymer in the second-step polishing liquid is made higher than the concentration of the water-soluble polymer in the first-step polishing liquid.