Methods of forming finfet devices with a shared gate structure

  • US 8,936,986 B2
  • Filed: 03/12/2013
  • Issued: 01/20/2015
  • Est. Priority Date: 03/12/2013
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a shared sacrificial gate structure above at least one first fin for a first type of FinFET device and at least one second fin for a second type of FinFET device, said second type being opposite to said first type; and

    forming a first sidewall spacer around an entire perimeter of said shared sacrificial gate structure in a single deposition process operation and a single etching process operation.

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