Redox capacitor and manufacturing method thereof

• US 8,952,490 B2
• Filed: 09/27/2010
• Issued: 02/10/2015
• Est. Priority Date: 09/30/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuriki, Kazutaka, Ogino, Kiyofumi, Saito, Yumiko, Sakata, Junichiro
• Primary Examiner(s): Smoot, Stephen W
• Assistant Examiner(s): Booker, Vicki B
• Application Number:
  US12/891,461
• Publication Number:
  US 20110073991A1
• Time in Patent Office: 1,597 Days
• Field of Search: 257/532, 257/E21.008, 257/E21.048, 438/381
• US Class Current: 257/532
• CPC Class Codes: H01G 11/02 using combined reduction-oxidation reactions, e.g. redox arrangement or solion
• CPC Class Codes: H01G 11/28 arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
• CPC Class Codes: H01G 11/56 Solid electrolytes, e.g. gels; Additives therein
• CPC Class Codes: H01G 11/68 characterised by their material
• CPC Class Codes: H01G 11/70 characterised by their structure
• CPC Class Codes: H01G 11/84 Processes for the manufacture of hybrid or EDL capacitors, or components thereof
• CPC Class Codes: H01G 9/22 Devices using combined reduction and oxidation, e.g. redox arrangement or solion
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: Y02E 60/13 Energy storage using capacitors

Abstract

To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO₃(ZnO)_m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.

Claims

1. A redox capacitor comprising an electrolyte formed using an oxide semiconductor including hydrogen, wherein the oxide semiconductor is In—

Ga—

Zn-oxide including a crystal.

2. The redox capacitor according to claim 1, wherein the oxide semiconductor further includes nitrogen.

3. A redox capacitor comprising an electrolyte formed using an oxide semiconductor including hydrogen, wherein the oxide semiconductor comprises indium, gallium, zinc, and nitrogen.

4. A redox capacitor comprising:

a first active material;

a first current collector in contact with the first active material;

an electrolyte in contact with the first current collector;

a second current collector in contact with the electrolyte; and

a second active material in contact with the second current collector,

wherein the electrolyte comprises an oxide semiconductor including hydrogen, and

wherein the oxide semiconductor In—

Ga—

Zn-oxide including a crystal.

5. The redox capacitor according to claim 4, wherein the oxide semiconductor further includes nitrogen.

6. A redox capacitor comprising:

a first active material;

a first current collector in contact with the first active material;

an electrolyte in contact with the first current collector;

a second current collector in contact with the electrolyte; and

a second active material in contact with the second current collector,

wherein the electrolyte comprises an oxide semiconductor including hydrogen, and

wherein the oxide semiconductor comprises indium, gallium, zinc, and nitrogen.