Semiconductor device and method of driving semiconductor device
First Claim
1. A semiconductor device comprising:
- a potential divider circuit comprising;
a power supply line;
a selection line;
an operational amplifier circuit including a first transistor, the first transistor including a first gate, a first source and a first drain;
a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and
a switch transistor including a gate, a source and a drain, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor of the operational amplifier circuit,wherein a semiconductor substrate including silicon includes a channel formation region of the first transistor,wherein a first electrode including the first gate is over the channel formation region of the first transistor,wherein an oxide semiconductor layer including a channel formation region of the switch transistor is above the first electrode,wherein a second electrode electrically connected to the oxide semiconductor layer is over and in contact with the first electrode, andwherein a third electrode including the gate is over the oxide semiconductor layer.
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Accused Products
Abstract
An object of the invention is to reduce the power consumption of a semiconductor device that requires a plurality of reference potentials and a method of driving the semiconductor device. Disclosed is a semiconductor device having a potential divider circuit in which a potential supplied to a power supply line is resistively divided by resistors connected in series to the power supply line so that a desired potential is output through a switch transistor electrically connected to the power supply line. A drain terminal of the switch transistor is electrically connected to a gate terminal of a transistor provided in a circuit on the output side (or to one terminal of a capacitor) to form a node. The switch transistor has an off current low enough to hold the desired voltage in the node even when the potential is no more supplied to the power supply line.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a potential divider circuit comprising; a power supply line; a selection line; an operational amplifier circuit including a first transistor, the first transistor including a first gate, a first source and a first drain; a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and a switch transistor including a gate, a source and a drain, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor of the operational amplifier circuit, wherein a semiconductor substrate including silicon includes a channel formation region of the first transistor, wherein a first electrode including the first gate is over the channel formation region of the first transistor, wherein an oxide semiconductor layer including a channel formation region of the switch transistor is above the first electrode, wherein a second electrode electrically connected to the oxide semiconductor layer is over and in contact with the first electrode, and wherein a third electrode including the gate is over the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of driving a semiconductor device comprising:
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a potential divider circuit comprising; a power supply line; a selection line; an operational amplifier circuit including a first transistor;
the first transistor including a first gate, a first source and a first drain;a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and a switch transistor including a gate, a source and a drain, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor of the operational amplifier circuit to form a second node, the method comprising; dividing a first potential supplied to the power supply line with the first resistor and the second resistor to obtain a second potential; applying the second potential to the operational amplifier circuit through the switch transistor when the switch transistor is turned on; holding the second potential at the second node when the switch transistor is turned off; and outputting the second potential from the operational amplifier circuit, the switch transistor being either turned on or turned off, wherein a semiconductor substrate including silicon includes a channel formation region of the first transistor, wherein a first electrode including the first gate is over the channel formation region of the first transistor, wherein an oxide semiconductor layer including a channel formation region of the switch transistor is above the first electrode, wherein a second electrode electrically connected to the oxide semiconductor layer is over and in contact with the first electrode, and wherein a third electrode including the gate is over the oxide semiconductor layer. - View Dependent Claims (10, 11)
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12. A semiconductor device comprising:
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a potential divider circuit comprising; a power supply line; a selection line; an operational amplifier circuit including a first transistor, the first transistor including a first gate, a first source and a first drain; a first resistor and a second resistor, the first resistor and the second resistor being connected in series to the power supply line; and a switch transistor including a gate, a source and a drain, the gate being electrically connected to the selection line, the source being electrically connected to a node between the first resistor and the second resistor, and the drain being electrically connected to the first gate of the first transistor of the operational amplifier circuit, wherein the potential divider circuit comprises a potential controller transistor configured so that the first resistor and the second resistor are electrically connected to the power supply line through a source and a drain of the potential controller transistor, wherein the potential controller transistor includes a channel formation region including an oxide semiconductor, wherein a semiconductor substrate including silicon includes a channel formation region of the first transistor, wherein a first electrode including the first gate is over the channel formation region of the first transistor, wherein an oxide semiconductor layer including a channel formation region of the switch transistor is above the first electrode, wherein a second electrode electrically connected to the oxide semiconductor layer is over and in contact with the first electrode, and wherein a third electrode including the gate is over the oxide semiconductor layer. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification