Semiconductor device

• US 8,957,423 B2
• Filed: 10/04/2013
• Issued: 02/17/2015
• Est. Priority Date: 09/19/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Eguchi, Shingo, Oikawa, Yoshiaki
• Primary Examiner(s): Diaz, Jose R
• Application Number:
  US14/046,006
• Publication Number:
  US 20140027852A1
• Time in Patent Office: 501 Days
• Field of Search: 257/59, 257/72, 257/679, 257/684, 257/247, 257/E29.273
• US Class Current: 257/72
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785

Abstract

A semiconductor device in which defects in characteristics due to electrostatic discharge is reduced and a method for manufacturing the semiconductor device are provided. The semiconductor device has at least one of these structures: (1) a structure in which a first and second insulating films are in direct contact with each other in a peripheral region of a circuit portion, (2) a structure in which a first and second insulators are closely attached to each other, and (3) a structure in which a first conductive layer and a second conductive layer are provided on outer surfaces of the first insulator and the second insulator, respectively, and electrical conduction between the first and second conductive layers is achieved at a side surface of the peripheral region. Note that the conduction at the side surface can be achieved by cutting a plurality of semiconductor devices into separate semiconductor devices.

Claims

1. A semiconductor device comprising:

a first conductive layer;

a first insulating film over the first conductive layer;

a circuit portion over the first insulating film, the circuit portion comprising a transistor;

a second insulating film over the circuit portion; and

a second conductive layer over the second insulating film,

wherein the first insulating film is in contact with the second insulating film at a periphery of the circuit portion,

wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide, and

wherein the first conductive layer is electrically connected to the second conductive layer at side surfaces of the first insulating film and the second insulating film.

2. The semiconductor device according to claim 1, further comprising an antenna over the circuit portion.

3. The semiconductor device according to claim 1,

wherein the transistor is a thin film transistor.

4. A semiconductor device comprising:

a first conductive layer;

a first insulating film over the first conductive layer;

a circuit portion over the first insulating film, the circuit portion comprising a transistor;

a third insulating film over the circuit portion;

a fourth insulating film over the third insulating film;

a second insulating film over the fourth insulating film; and

a second conductive layer over the second insulating film,

wherein the first insulating film is in contact with the second insulating film at a periphery of the circuit portion,

wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide,

wherein the third insulating film is in contact with the fourth insulating film at the periphery of the circuit portion, and

wherein the first conductive layer is electrically connected to the second conductive layer at side surfaces of the first insulating film and the second insulating film.

5. The semiconductor device according to claim 4, further comprising an antenna over the circuit portion.

6. The semiconductor device according to claim 4,

wherein the transistor is a thin film transistor.

7. A semiconductor device comprising:

a first conductive layer;

a first insulating film over the first conductive layer;

a circuit portion over the first insulating film, the circuit portion comprising a transistor;

a third insulating film over the circuit portion;

a fourth insulating film over the third insulating film;

a second insulating film over the fourth insulating film; and

a second conductive layer over the second insulating film,

wherein the first insulating film is in contact with the second insulating film at a periphery of the circuit portion,

wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide,

wherein the third insulating film is in contact with the fourth insulating film at the periphery of the circuit portion,

wherein the circuit portion overlaps with the first conductive layer and the second conductive layer,

wherein the first conductive layer is electrically connected to the second conductive layer at side surfaces of the first insulating film and the second insulating film.

8. The semiconductor device according to claim 7, further comprising an antenna over the circuit portion.

9. The semiconductor device according to claim 7,

wherein the transistor is a thin film transistor.