Variable capacitor and liquid crystal display device

• US 8,957,468 B2
• Filed: 10/31/2011
• Issued: 02/17/2015
• Est. Priority Date: 11/05/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Uochi, Hideki
• Primary Examiner(s): Glick, Edward
• Assistant Examiner(s): Nguyen, Sang V
• Application Number:
  US13/285,367
• Publication Number:
  US 20120113341A1
• Time in Patent Office: 1,205 Days
• Field of Search: 349/38, 349/39, 349/138, 349/139, 349/141, 349/155, 257/312
• US Class Current: 257/312
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/93 Variable capacitance diodes, e.g. varactors

Abstract

A variable capacitor with high controllability and stable operation is provided. A liquid crystal display device with low power consumption and excellent display quality is provided. A variable capacitor is formed using two overlapping electrodes of different areas and a substantially intrinsic semiconductor layer formed in contact with one of the electrodes. According to the voltage applied to the electrodes, the semiconductor layer can be considered as a dielectric or a conductor, thereby allowing varying the capacitance of the variable capacitor. The variable capacitor is applied to pixels of a liquid crystal display device configured to switch between a low capacitance and a high capacitance of the variable capacitor in accordance with a moving image display mode and a still image display mode, respectively, whereby a liquid crystal display device with low power consumption and excellent display quality can be realized.

Claims

1. A capacitor comprising:

a substrate;

a first electrode over the substrate;

a second electrode over the substrate; and

an insulating layer and a thin film oxide semiconductor layer both interposed between the first electrode and the second electrode, the thin film oxide semiconductor layer being separated from the first electrode by the insulating layer and in ohmic contact with the second electrode,

wherein an area where the thin film oxide semiconductor layer and the first electrode overlap with each other is larger than an area where the first electrode, the thin film oxide semiconductor layer, and the second electrode overlap with one another,

wherein a top surface portion and a side surface portion of the thin film oxide semiconductor layer do not overlap with the second electrode,

wherein the thin film oxide semiconductor layer is of i-type or substantially i-type and has a carrier density lower than 1×

10¹²/cm³.

2. The capacitor according to claim 1, wherein a work function of the second electrode is less than or equal to an electron affinity of the thin film oxide semiconductor layer.

3. The capacitor according to claim 1, wherein the thin film oxide semiconductor layer is in direct contact with the second electrode.

4. The capacitor according to claim 1, wherein the thin film oxide semiconductor layer comprises a C-Axis Aligned Crystal.

5. An electronic device including the capacitor according to claim 1.

21. The capacitor according to claim 1, wherein the first electrode, the second electrode, the insulating layer and the thin film oxide semiconductor layer are made of planar layers formed on top of each other.

25. The capacitor according to claim 1, wherein the carrier density of the thin film oxide semiconductor layer is lower than 1.45×

10¹⁰/cm³.

34. The capacitor according to claim 1, wherein the capacitor is a variable capacitor.

6. A semiconductor device comprising:

a substrate;

an insulating layer over the substrate;

a thin film oxide semiconductor layer over the substrate;

a capacitor comprising;

a first electrode and a second electrode each over the substrate; and

a first portion of the insulating layer and a first portion of the thin film oxide semiconductor layer both interposed between the first electrode and the second electrode, the first portion of the thin film oxide semiconductor layer being separated from one of the first electrode and the second electrode by the first portion of the insulating layer and being in ohmic contact with the other one of the first electrode and the second electrode; and

a transistor comprising;

a gate;

a second portion of the insulating layer as a gate insulating layer;

a channel formation region comprising a second portion of the thin film oxide semiconductor layer; and

a source and a drain, one of the source and the drain being electrically connected to the second electrode of the capacitor,

wherein an area where the first portion of the thin film oxide semiconductor layer and the one of the first electrode and the second electrode overlap with each other is larger than an area where the first electrode, the first portion of the thin film oxide semiconductor layer, and the second electrode overlap with one another,

wherein a top surface portion and a side surface portion of the thin film oxide semiconductor layer do not overlap with the other one of the first electrode and the second electrode, and

wherein the thin film oxide semiconductor layer is of i-type or substantially i-type and has a carrier density lower than 1×

10¹²/cm³.

7. The semiconductor device according to claim 6, wherein a work function of the other one of the first electrode and the second electrode is less than or equal to an electron affinity of the thin film oxide semiconductor layer.

8. The semiconductor device according to claim 6, wherein the thin film oxide semiconductor layer is in direct contact with the second electrode.

9. The semiconductor device according to claim 6, wherein the thin film oxide semiconductor layer comprises a C-Axis Aligned Crystal.

10. An electronic device including the semiconductor device according to claim 6.

22. The semiconductor device according to claim 6, wherein the first electrode, the second electrode, the first portion of the insulating layer and the first portion of the thin film oxide semiconductor layer are made of planar layers formed on top of each other.

26. The semiconductor device according to claim 6, wherein the carrier density of the thin film oxide semiconductor layer is lower than 1.45×

10¹⁰/cm³.

29. The semiconductor device according to claim 6,

wherein the first electrode and the gate are made of a same first conductive film, and

wherein the second electrode and the one of the source and the drain are made of a same second conductive layer.

30. The semiconductor device according to claim 6, wherein the gate is interposed between the substrate and the second portion of the thin film oxide semiconductor layer.

35. The semiconductor device according to claim 6, wherein the capacitor is a variable capacitor.

11. A liquid crystal display device comprising:

a substrate;

an insulating layer over the substrate;

a thin film oxide semiconductor layer over the substrate;

a pixel comprising;

a transistor comprising a gate, a source and a drain each over the substrate;

a capacitor comprising;

a first electrode and a second electrode each over the substrate, the second electrode being electrically connected to one of the source and the drain of the transistor;

a first portion of the insulating layer and a first portion of the thin film oxide semiconductor layer both interposed between the first electrode and the second electrode, the first portion of the thin film oxide semiconductor layer being separated from one of the first electrode and the second electrode by the first portion of the insulating layer and being in ohmic contact with the other one of the first electrode and the second electrode; and

a liquid crystal element comprising a third electrode electrically connected to the second electrode of the capacitor;

a first driver circuit;

a first wiring electrically connected to the first driver circuit and to the gate of the transistor;

a second driver circuit;

a second wiring electrically connected to the second driver circuit and to the other of the source and the drain of the transistor;

a third driver circuit; and

a third wiring electrically connected to the third driver circuit and to the first electrode of the variable capacitor,

wherein the transistor comprises a second portion of the insulating layer as a gate insulating layer,

wherein the transistor comprises a channel formation region comprising a second portion of the thin film oxide semiconductor layer,

wherein an area where the first portion of the thin film oxide semiconductor layer and the one of the first electrode and the second electrode overlap with each other is larger than an area where the first electrode, the first portion of the thin film oxide semiconductor layer, and the second electrode overlap with one another,

wherein a top surface portion and a side surface portion of the thin film oxide semiconductor layer do not overlap with the other one of the first electrode and the second electrode, and

wherein the thin film oxide semiconductor layer is of i-type or substantially i-type and has a carrier density lower than 1×

10¹²/cm³.

12. The liquid crystal display device according to claim 11,

wherein the gate of the transistor and the first electrode of the capacitor are made of a same first conductive layer, and

wherein the source, the drain, and the second electrode are made of a same second conductive layer.

13. The liquid crystal display device according to claim 11, wherein a work function of the other one of the first electrode and the second electrode is less than or equal to an electron affinity of the thin film oxide semiconductor layer.

14. The liquid crystal display device according to claim 11, wherein the thin film oxide semiconductor layer comprises a C-Axis Aligned Crystal.

15. An electronic device including the liquid crystal display device according to claim 11.

23. The liquid crystal display device according to claim 11, wherein the first electrode, the second electrode, the insulating layer and the first portion of the thin film oxide semiconductor layer are made of planar layers formed on top of each other.

27. The liquid crystal display device according to claim 11, wherein the carrier density of the thin film oxide semiconductor layer is lower than 1.45×

10¹⁰/cm³.

31. The liquid crystal display device according to claim 11, wherein the gate is interposed between the substrate and the second portion of the thin film oxide semiconductor layer.

36. The liquid crystal display device according to claim 11, wherein the capacitor is a variable capacitor.

16. A liquid crystal display device comprising:

a substrate;

an insulating layer over the substrate;

a thin film oxide semiconductor layer over the substrate;

a pixel comprising;

a transistor comprising a gate, a source, and a drain each over the substrate;

a capacitor comprising;

a first electrode and a second electrode each over the substrate, the second electrode being electrically connected to one of the source and the drain of the transistor;

a first portion of the insulating layer and a first portion of the thin film oxide semiconductor layer both interposed between the first electrode and the second electrode, the first portion of the thin film oxide semiconductor layer being separated from one of the first electrode and the second electrode by the first portion of the insulating layer and being in ohmic contact with the other one of the first electrode and the second electrode; and

a liquid crystal element comprising a third electrode electrically connected to the second electrode of the capacitor;

a memory circuit configured to store image signals corresponding to successive frame periods; and

a comparison circuit configured to compare the image signals corresponding to the successive frame periods;

wherein the liquid crystal display device is configured to apply a voltage to the first electrode of the capacitor in accordance with a result of a comparison between the image signals corresponding to the successive frame periods,

wherein an area where the first portion of the thin film oxide semiconductor layer and the one of the first electrode and the second electrode overlap with each other is larger than an area where the first electrode, the first portion of the thin film oxide semiconductor layer, and the second electrode overlap with one another,

wherein a top surface portion and a side surface portion of the thin film oxide semiconductor layer do not overlap with the other one of the first electrode and the second electrode, and

wherein the thin film oxide semiconductor layer is of i-type or substantially i-type and has a carrier density lower than 1×

10¹²/cm³.

17. The liquid crystal display device according to claim 16,

wherein the transistor comprises a second portion of the insulating layer as a gate insulating layer,

wherein the transistor comprises a channel formation region comprising a second portion of the thin film oxide semiconductor layer,

wherein the gate of the transistor and the first electrode of the capacitor are made of a same first conductive layer, and

wherein the source and the drain of the transistor and the second electrode of the capacitor are made a same second conductive layer.

18. The liquid crystal display device according to claim 16, wherein a work function of the other one of the first electrode and the second electrode is less than or equal to an electron affinity of the thin film oxide semiconductor layer.

19. The liquid crystal display device according to claim 16, wherein the thin film oxide semiconductor layer comprises a C-Axis Aligned Crystal.

20. An electronic device including the liquid crystal display device according to claim 16.

24. The liquid crystal display device according to claim 16, wherein the first electrode, the second electrode, the insulating layer and the first portion of the thin film oxide semiconductor layer are made of planar layers formed on top of each other.

28. The liquid crystal display device according to claim 16, wherein the carrier density of the thin film oxide semiconductor layer is lower than 1.45×

10¹⁰/cm³.

32. The liquid crystal display device according to claim 16, wherein the gate is interposed between the substrate and a channel formation region of the transistor.

33. The liquid crystal display device according to claim 16, wherein the voltage applied to the first electrode of the capacitor depends on which of a still image and a moving image is to be displayed as judged by the comparison circuit.

37. The liquid crystal display device according to claim 16, wherein the capacitor is a variable capacitor.