Chemical sensor with sidewall spacer sensor surface
First Claim
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1. A chemical sensor comprising:
- a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface;
a dielectric material defining an opening extending to the upper surface of the floating gate conductor; and
a conductive sidewall spacer on a sidewall of the opening and contacting the upper surface of the floating gate conductor;
wherein the chemically-sensitive field effect transistor includes a floating gate structure comprising a plurality of conductors electrically coupled to one another and separated by dielectric layers, and the floating gate conductor is an uppermost conductor in the plurality of conductors.
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Abstract
In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.
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10 Claims
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1. A chemical sensor comprising:
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a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface; a dielectric material defining an opening extending to the upper surface of the floating gate conductor; and a conductive sidewall spacer on a sidewall of the opening and contacting the upper surface of the floating gate conductor;
wherein the chemically-sensitive field effect transistor includes a floating gate structure comprising a plurality of conductors electrically coupled to one another and separated by dielectric layers, and the floating gate conductor is an uppermost conductor in the plurality of conductors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification