Non-volatile memory devices, operating methods thereof and memory systems including the same
First Claim
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1. A memory system comprising:
- a controller and a nonvolatile memory device,the controller being configured to control program, read and erase operations of the nonvolatile memory device,the nonvolatile memory device including,a substrate,the substrate including doping regions that are spaced apart from each other and extend in a first direction;
a plurality of memory cell groups arranged in rows and columns on the substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate, each memory cell group including a pillar that extends vertically on a portion of the substrate between an adjacent pair of the doping regions,a plurality of bitlines,a read and write circuit connected to the columns of the plurality of memory cell groups through the plurality of bit lines respectively, anda plurality of word lines connected to the plurality of memory cells of each memory cell group, respectively, anda wordline driver connected to rows of the plurality of memory cell groups through the plurality of word lines, the plurality of word lines being connected to the plurality of memory cells of each memory cell group respectively,the controller being configured to transfer data to the read and write circuit, control the wordline driver and the read and write circuit to program the transferred data into the memory cell array, to control the read and write circuit and the wordline driver to read data from the memory cell array to the read and write circuit and read the data from the read and write circuit, and to control the wordline driver to erase the plurality of memory cells, andthe wordline driver is configured, under control of the controller, to apply a first voltage to a first word line among the plurality of word lines and a second voltage to a second word line among the plurality of word lines,the second voltage being different than the first voltage,the second word being closer to the substrate than the first word line.
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Abstract
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
150 Citations
13 Claims
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1. A memory system comprising:
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a controller and a nonvolatile memory device, the controller being configured to control program, read and erase operations of the nonvolatile memory device, the nonvolatile memory device including, a substrate, the substrate including doping regions that are spaced apart from each other and extend in a first direction; a plurality of memory cell groups arranged in rows and columns on the substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate, each memory cell group including a pillar that extends vertically on a portion of the substrate between an adjacent pair of the doping regions, a plurality of bitlines, a read and write circuit connected to the columns of the plurality of memory cell groups through the plurality of bit lines respectively, and a plurality of word lines connected to the plurality of memory cells of each memory cell group, respectively, and a wordline driver connected to rows of the plurality of memory cell groups through the plurality of word lines, the plurality of word lines being connected to the plurality of memory cells of each memory cell group respectively, the controller being configured to transfer data to the read and write circuit, control the wordline driver and the read and write circuit to program the transferred data into the memory cell array, to control the read and write circuit and the wordline driver to read data from the memory cell array to the read and write circuit and read the data from the read and write circuit, and to control the wordline driver to erase the plurality of memory cells, and the wordline driver is configured, under control of the controller, to apply a first voltage to a first word line among the plurality of word lines and a second voltage to a second word line among the plurality of word lines, the second voltage being different than the first voltage, the second word being closer to the substrate than the first word line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electronics Co. Ltd.
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InventorsShim, Sun-Il, Jang, Jae-Hoon, Chae, Donghyuk, Lim, Youngho, Kim, Hansoo, Jeong, Jaehun
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Primary Examiner(s)MAI, SON LUU
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Application NumberUS13/867,716Publication NumberTime in Patent Office673 DaysField of Search365/185.18US Class Current365/185.18CPC Class CodesG11C 11/4074 Power supply or voltage gen...G11C 11/4085 Word line control circuits,...G11C 11/4096 Input/output [I/O] data man...G11C 16/0483 comprising cells having sev...G11C 16/08 Address circuits; Decoders;...G11C 16/10 Programming or data input c...G11C 16/12 Programming voltage switchi...G11C 16/14 Circuits for erasing electr...G11C 16/26 Sensing or reading circuits...G11C 16/3418 Disturbance prevention or e...G11C 16/3459 Circuits or methods to veri...G11C 5/06 Arrangements for interconne...H10B 43/27 the channels comprising ver...H10B 43/35 with cell select transistor...
