Method and structure of sensors and MEMS devices using vertical mounting with interconnections

• US 8,981,560 B2
• Filed: 06/20/2013
• Issued: 03/17/2015
• Est. Priority Date: 06/23/2009
• Status: Active Grant

• Current Assignee: Movella Incorporated (Movella Holdings, Inc.)
• Original Assignee: mCube, Inc.
• Inventors: Jensen, Dave Paul, Wan, Hong, Ewanich, Jon
• Primary Examiner(s): Nguyen, Khiem D
• Assistant Examiner(s): JEAN BAPTISTE, WILNER
• Application Number:
  US13/923,011
• Publication Number:
  US 20130277836A1
• Time in Patent Office: 635 Days
• Field of Search: 257/737, 257/750, 257/762
• US Class Current: 257/737
• CPC Class Codes: B81B 3/00 Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes B81B5/00 takes precedence
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/10175 Flow barriers
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1145 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/13082 Two-layer arrangements
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16105 the bump connector connecting bonding areas being not aligned with respect to each other
• CPC Class Codes: H01L 2224/16238 the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24226 : the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8121 : using a reflow oven
• CPC Class Codes: H01L 2224/8123 : Polychromatic or infrared lamp heating
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1461 : MEMS

Abstract

A method and structure for fabricating sensor(s) or electronic device(s) using vertical mounting with interconnections. The method includes providing a resulting device including at least one sensor or electronic device, formed on a die member, having contact region(s) with one or more conductive materials formed thereon. The resulting device can then be singulated within a vicinity of the contact region(s) to form one or more singulated dies, each having a singulated surface region. The singulated die(s) can be coupled to a substrate member, having a first surface region, such that the singulated surface region(s) of the singulated die(s) are coupled to a portion of the first surface region. Interconnections can be formed between the die(s) and the substrate member with conductive adhesives, solder processes, or other conductive bonding processes.

Claims

1. An integrated sensor device or electronic device, the device comprising:

a substrate member having a first surface region, the substrate member having at least one contact region;

at least one singulated integrated sensor or electronic device each coupled to a die member, each die member having a singulated surface region and at least one contact region, the singulated surface region(s) being coupled to the first surface region;

at least one first conductive material formed overlying at least the contact region(s) of the singulated integrated sensor or electronic device; and

at least one second conductive material formed overlying at least a portion of the first conductive material(s).

2. The device of claim 1 further comprising at least one solder material formed overlying at least a portion the second conductive material(s).

3. The device of claim 2 wherein the solder material(s) comprises tin (Sn), silver (Ag), or a tin-silver alloy (SnAg).

4. The device of claim 2 wherein the solder material(s) are reflowed solder material(s).

5. The device of claim 2 further comprising forming at least one third conductive material overlying at least a portion of the contact region(s) of the substrate member.

6. The device of claim 5 wherein the first, second, and third conductive material(s) comprise one or more metal materials selected from a group consisting of:

copper (Cu), gold (Au), silver (Ag), and tin (Sn).

7. The device of claim 5 wherein the third conductive material(s) comprise silver-filled epoxies, interposers, redistribution layers (RDLs), or metal bumps.

8. The device of claim 1 wherein the sensor(s) or electronic device(s) comprise CMOS integrated circuit device(s), MEMS device(s), magneto-resistive device(s), or integrated MEMS-CMOS device(s).

9. The device of claim 1 wherein the magneto-resistive device(s) comprise anisotropic magneto-resistive (AMR), ordinary magneto-resistive (OMR), giant magneto-resistive (GMR), or tunnel junction magneto-resistive (TMR) device(s).

10. The device of claim 1 wherein the first conductive material(s) comprise silver-filled epoxies, interposers, redistribution layers (RDLs), or metal bumps.

11. The device of claim 1 wherein the second conductive material(s) comprise silver-filled epoxies, interposer(s), redistribution layers (RDLs), or metal bumps.