Reverse stack structures for thin-film photovoltaic cells

• US 8,993,370 B2
• Filed: 04/20/2012
• Issued: 03/31/2015
• Est. Priority Date: 04/20/2012
• Status: Active Grant

• Current Assignee: Zetta Research and Development LLC - AQT Series (Zetta Research, LLC)
• Original Assignee: Zetta Research and Development LLC - AQT Series (Zetta Research, LLC)
• Inventors: Munteanu, Mariana Rodica, Murali, Amith Kumar, Hayes, Kirk, Bartholomeusz, Brian Josef
• Primary Examiner(s): Sarkar, Asok K
• Application Number:
  US13/452,603
• Publication Number:
  US 20130276888A1
• Time in Patent Office: 1,075 Days
• Field of Search: 136/262, 136/264, 136/265, 257/E21.122, 257/E21.567, 438/22, 438/46, 438/95, 438/455, 438/458
• US Class Current: 438/95
• CPC Class Codes: H01L 31/02008 for solar cells or solar cell modules
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/0326 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
• CPC Class Codes: H01L 31/03928 including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
• CPC Class Codes: H01L 31/1864 Annealing
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.

Claims

1. A method for manufacturing a photovoltaic cell, comprising:

depositing a photo active layer onto a first substrate;

depositing a contact layer onto the photo active layer;

attaching a second substrate onto the contact layer;

removing the first substrate from the photo active layer, contact layer, and second substrate;

depositing a buffer layer onto the photoactive layer on a side opposite from the contact layer after removing the first substrate from the photo active layer; and

forming a semiconductor material in the buffer layer from the photo active layer and the buffer layer.

2. The method of claim 1, further comprising:

depositing a conducting layer onto the buffer layer; and

depositing a metal grid onto the conducting layer,

wherein the buffer layer includes a metal.

3. The method of claim 2, wherein the forming the semiconductor material in the buffer layer from the photo active layer and the buffer layer comprises annealing the photo active layer and the buffer layer, and

wherein the metal from the buffer layer and a chalcogen from the photo active layer react to form the semiconductor material which is n-type in the annealed buffer layer.

4. The method of claim 3, wherein the chalcogen of the photo active layer that reacts with the metal comprises one or more of S or Se.

5. The method of claim 2, wherein the metal is Mo.

6. The method of claim 1, wherein attaching the second substrate onto the contact layer comprises applying a conductive adhesive to the second substrate and the contact layer.

7. The method of claim 6, wherein the conductive adhesive comprises silver epoxy.

8. The method of claim 1, wherein removing the first substrate from the photo active layer, contact layer, and second substrate comprises peeling the photo active layer, contact layer, and second substrate off of the first substrate.

9. The method of claim 1, wherein the photo active layer comprises Cu, Zn, Sn, and one or more of S or Se, and

wherein a metal from the buffer layer and a chalcogen from the photo active layer form the semiconductor material in the buffer layer.

10. The method of claim 1, wherein the photo active layer comprises crystalline Cu₂ZnSn(S,Se)₄, and

wherein a metal from the buffer layer and a chalcogen from the photo active layer form the semiconductor material in the buffer layer.

11. The method of claim 1, wherein the photo active layer comprises Cu, one or more of In or Ga, and one or more of S or Se, and

wherein a metal from the buffer layer and a chalcogen from the photo active layer form the semiconductor material in the buffer layer.

12. The method of claim 1, wherein the photo active layer comprises crystalline Culn_yGa_(1-y)(S, Se)₂, and wherein 0≦

y≦

1, and

wherein a metal from the buffer layer and a chalcogen from the photo active layer form the semiconductor material in the buffer layer.

13. The method of claim 1, wherein the second substrate comprises a flexible metallic foil.

14. The method of claim 1, further comprising depositing a release layer between the photo active layer and the first substrate to facilitate removal of the first substrate from the photo active layer, contact layer, and second substrate.

15. The method of claim 14, wherein the release layer comprises BN.

16. The method of claim 1, wherein the first substrate comprises soda lime glass.

17. The method of claim 1, further comprising annealing the photo active layer.

18. The method of claim 1, wherein heat is provided during annealing using a combination of radiative, convective, and conductive heating to the photo active layer.

19. A method for manufacturing a photovoltaic cell, comprising:

depositing a photo active layer onto a first substrate;

depositing a contact layer onto the photo active layer;

attaching a second substrate onto the contact layer;

removing the first substrate from the photo active layer, contact layer, and second substrate;

depositing a buffer layer onto the photo active layer on a side opposite from the contact layer after removing the first substrate from the photo active layer; and

depositing a conducting layer onto the semiconductor layer,

wherein the buffer layer and the photo active layer interact to form a semiconductor material in the buffer layer.