Grown photonic crystals in semiconductor light emitting devices

• US 9,000,450 B2
• Filed: 02/24/2012
• Issued: 04/07/2015
• Est. Priority Date: 06/17/2005
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.)
• Inventors: Wierer, Jonathan J. Jr., Krames, Michael R., Gardner, Nathan F.
• Primary Examiner(s): Nguyen, Khiem D
• Application Number:
  US13/404,369
• Publication Number:
  US 20120161187A1
• Time in Patent Office: 1,138 Days
• Field of Search: 257/79, 257/94, 257/98, 257/99, 257/E33.001, 257/E33.006, 438/22, 438/44
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

Claims

1. A device comprising:

a semiconductor structure comprising a light emitting layer configured to emit light of wavelength λ

, the light emitting layer being disposed between an n-type region and a p-type region, the semiconductor structure having a top surface and a bottom surface; and

a photonic crystal disposed within the semiconductor structure, the photonic crystal comprising;

a plurality of posts of semiconductor material having a first refractive index arranged in an array, each post being located less than 5λ

from a nearest neighbor post; and

a region of a material having a second refractive index surrounding the posts, wherein the second refractive index is different from the first refractive index, the region of material having a second refractive index having a first end and a second end opposite the first end;

wherein the first end of the region of the material having a second refractive index comprises inverted pyramids that connect to form a planar semiconductor layer over the plurality of posts and the region of the material having a second refractive index, and the second end of the region of the material having a second refractive index comprises a mask layer disposed between the posts;

wherein the region of the material having a second refractive index does not extend to the top surface or the bottom surface such that the top surface and the bottom surface of the semiconductor structure are uninterrupted by the photonic crystal, and wherein the top surface and the bottom surface are continuous, planar surfaces.

2. The device of claim 1 wherein the light emitting layer is a III-nitride layer.

3. The device of claim 1 wherein the material having a second refractive index comprises one of air, an oxide of silicon, a nitride of silicon, an oxy-nitride of silicon, and a dielectric.

4. The device of claim 1 wherein the region of the material having a second refractive index has a thickness of at least ¼

λ

.

5. The device of claim 1 wherein the plurality of posts are arranged in a lattice having a lattice constant between 0.1λ

and 3λ

.

6. The device of claim 1 further comprising:

a first contact disposed on the bottom surface of the semiconductor structure; and

a second contact disposed on the top surface of the semiconductor structure.

7. The device of claim 1 wherein:

the top surface comprises a substantially planar surface;

a portion of the light emitting layer and one of the n-type region and the p-type region is removed from the bottom surface, such that the bottom surface includes an exposed portion of the n-type region and an exposed portion of the p-type region;

a first contact is formed on the exposed portion of the n-type region; and

a second contact is formed on the exposed portion of the p-type region.

8. The device of claim 1 wherein the light emitting layer is disposed within the posts.

9. The device of claim 1 wherein the light emitting layer is a planar layer disposed outside the photonic crystal.

10. The device of claim 1 wherein the mask layer is less than 200 nm thick.

11. The device of claim 1 wherein:

the inverted pyramids comprise a bottom surface of the planar semiconductor layer; and

a top surface of the planar semiconductor layer is planar.

12. The device of claim 1 wherein the region of the material having a second refractive index is entirely contained within a semiconductor structure that is free of a bonded interface.