Diode having vertical structure
First Claim
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1. A light emitting device comprising:
- an Al layer;
an undoped GaN buffer layer on the Al layer;
an n-GaN layer on the undoped GaN buffer layer;
an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;
a p-GaN layer on the active layer; and
a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;
wherein the undoped GaN buffer layer is thicker than the Al layer.
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Abstract
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
208 Citations
20 Claims
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1. A light emitting device comprising:
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an Al layer; an undoped GaN buffer layer on the Al layer; an n-GaN layer on the undoped GaN buffer layer; an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer; a p-GaN layer on the active layer; and a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer; wherein the undoped GaN buffer layer is thicker than the Al layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A light emitting device comprising:
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a metal layer comprising Au; an Al layer on the metal layer; an undoped GaN buffer layer on the Al layer; an n-GaN layer on the undoped GaN buffer layer; an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer; a p-GaN layer on the active layer; and a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer; wherein a thickness of the undoped GaN buffer layer is thicker than a thickness of the Al layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A light emitting device comprising:
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a metal layer comprising Au; an Al layer on the metal layer; an undoped GaN buffer layer on the Al layer; an n-GaN layer on the undoped GaN buffer layer; an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer; a p-GaN layer on the active layer; and a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer; wherein the undoped GaN buffer layer is thicker than the Al layer, wherein ratio of a thickness of the Al layer to a thickness of the undoped GaN buffer layer is greater than 0.0075, wherein the n-GaN layer is doped with Si with a doping concentration of 1017 cm−
3 or greater, andwherein the p-GaN layer is doped with Mg with a doping concentration of 1017 cm−
3 or greater. - View Dependent Claims (17, 18, 19, 20)
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Specification