Direct-drain trench FET with source and drain isolation
First Claim
1. An apparatus comprising:
- a semiconductor layer of a first conductivity type, the semiconductor layer having a top-side surface;
a well region of a second conductivity type opposite the first conductivity type, the well region being disposed in an upper portion of the semiconductor layer;
a gate trench disposed in the semiconductor layer, the gate trench extending through the well region;
a drain contact disposed, at least in part, on the top-side surface of the semiconductor layer, the drain contact being adjacent to the well region;
an isolation trench disposed between the drain contact and the gate trench in the semiconductor layer, the isolation trench extending through the well region;
a termination trench disposed in the semiconductor layer and disposed between the gate trench and the isolation trench, the termination trench extending through the well region; and
at least one termination electrode disposed in the termination trench.
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Accused Products
Abstract
In a general aspect, an apparatus can include a semiconductor layer of a first conductivity type, the semiconductor layer having a top-side surface. The apparatus can also include a well region of a second conductivity type opposite the first conductivity type, the well region being disposed in an upper portion of the semiconductor layer. The apparatus can further include a gate trench disposed in the semiconductor layer, the gate trench extending through the well region, and a drain contact disposed, at least in part, on the top-side surface of the semiconductor layer, the drain contact being adjacent to the well region. The apparatus can still further include an isolation trench disposed between the drain contact and the gate trench in the semiconductor layer, the isolation trench extending through the well region.
14 Citations
21 Claims
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1. An apparatus comprising:
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a semiconductor layer of a first conductivity type, the semiconductor layer having a top-side surface; a well region of a second conductivity type opposite the first conductivity type, the well region being disposed in an upper portion of the semiconductor layer; a gate trench disposed in the semiconductor layer, the gate trench extending through the well region; a drain contact disposed, at least in part, on the top-side surface of the semiconductor layer, the drain contact being adjacent to the well region; an isolation trench disposed between the drain contact and the gate trench in the semiconductor layer, the isolation trench extending through the well region; a termination trench disposed in the semiconductor layer and disposed between the gate trench and the isolation trench, the termination trench extending through the well region; and at least one termination electrode disposed in the termination trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A direct-drain trench field effect transistor (FET), comprising:
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a semiconductor substrate of a first conductivity type; a semiconductor layer of the first conductivity type disposed on the semiconductor substrate, the semiconductor layer having a doping concentration that is lower than a doping concentration of the semiconductor substrate; an active region disposed in the semiconductor layer; an isolation region disposed in the semiconductor layer; a drain region disposed in the semiconductor layer, the isolation region being disposed between the active region and the drain region; and a well region of a second conductivity type opposite the first conductivity type, the well region being disposed in the semiconductor layer and extending from the active region through the isolation region to the well region, the drain region including a direct-drain contact disposed, at least in part, on the semiconductor layer, the direct-drain contact extending through the semiconductor layer and terminating at an interface between the semiconductor layer and the semiconductor substrate, the isolation region including an isolation trench disposed in the semiconductor layer and extending through the well region. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method comprising:
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forming a semiconductor layer of a first conductivity type, the semiconductor layer having a top-side surface; forming a well region of a second conductivity type, the well region being disposed in an upper portion of the semiconductor layer; forming a gate trench disposed in the semiconductor layer, the gate trench extending through the well region; forming a drain contact on, at least in part, the top-side surface of the semiconductor layer, the drain contact being adjacent to the well region; forming an isolation trench in the semiconductor layer between the drain contact and the gate trench, the isolation trench extending through the well region; forming a termination trench in the semiconductor layer and between the gate trench and the isolation trench, the termination trench extending through the well region; and forming at least one termination electrode in the termination trench. - View Dependent Claims (19, 20, 21)
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Specification