Dielectric reliability assessment for advanced semiconductors

  • US 9,026,981 B2
  • Filed: 06/19/2014
  • Issued: 05/05/2015
  • Est. Priority Date: 05/22/2013
  • Status: Expired due to Fees
First Claim
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1. A computer implemented method for performing a dielectric reliability assessment for an advanced semiconductor, the method comprising:

  • receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown;

    scaling, by a processor, the data for the macro down to a reference area;

    extracting a parameter for a Weibull distribution from the scaled down data for the reference area;

    deriving a cluster factor (α

    ) from the scaled down data for the reference area; and

    projecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro,wherein the parameter include a Weibull shape factor (β

    ) and scale factor (τ

    ) and wherein the Weibull shape factor (β

    ), the scale factor (τ

    ) and the clustering factor (α

    ) are extracted according to;

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