Solar cell and method for manufacturing the same

  • US 9,064,999 B2
  • Filed: 09/07/2010
  • Issued: 06/23/2015
  • Est. Priority Date: 09/07/2009
  • Status: Active Grant
First Claim
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1. A solar cell, comprising:

  • a substrate that contains first impurities of a first conductive type, and is formed of a crystalline semiconductor;

    a first passivation layer directly positioned on an incident surface of the substrate;

    a first field region that is directly positioned on the first passivation layer, and contains second impurities of the first conductive type, the first field region being formed of amorphous silicon, amorphous silicon oxide, or amorphous silicon carbide;

    an anti-reflection layer directly positioned on the first field region;

    an emitter region that contains third impurities of a second conductive type opposite the first conductive type, is formed of a non-crystalline semiconductor, and is positioned on a non-incident surface of the substrate opposite the incident surface of the substrate;

    a second passivation layer positioned on the non-incident surface of the substrate;

    a second field region that is positioned at the non-incident surface of the substrate to be separated from the emitter region, wherein the second field region has the same conductive type as the first field region;

    a first electrode electrically connected to the emitter region; and

    a second electrode electrically connected to the second field region,wherein a concentration of the second impurities contained in the first field region is 1×

    1016 atoms/cm3 to 1×

    1021 atoms/cm3,the second passivation layer comprises first back passivation layers positioned between the substrate and the emitter region and between the substrate and the second field region, and a second back passivation layer exclusively and entirely positioned on the back surface of the substrate between the emitter region and the second field region,the first back passivation layers are formed of amorphous silicon, andthe second back passivation layer is formed of at least one of silicon oxide (SiOx) and silicon nitride (SiNx).

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