Thin film transistor and display device

• US 9,093,541 B2
• Filed: 02/23/2012
• Issued: 07/28/2015
• Est. Priority Date: 03/01/2011
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kitakado, Hidehito, Katoh, Sumio
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US14/002,211
• Publication Number:
  US 20140035478A1
• Time in Patent Office: 1,251 Days
• Field of Search: 257/43, 257/59, 257/72, 438/104, 438/159, 438/163
• US Class Current: 1/1
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The invention provides a thin film transistor having current driving force that can be substantially improved. By heat treatment, the IGZO layer (45) from which oxygen is taken away by the titanium electrodes (65) becomes the low resistance regions (40b), and the IGZO layer (45) from which oxygen is not taken away remains as the high resistance region (40a). In this state, when the gate voltage is applied to the gate electrode (20), electrons in the low resistance regions (40b) near the boundaries with the high resistance region (40a) move respectively to the titanium electrode (65) sides. As a result, the length of the low resistance regions (40b) becomes short, and oppositely, the length of the high resistance region (40a) becomes longer by the size of the shortened low resistance regions. However, the electrical channel length (Le) becomes shorter than the source/drain interval space (Lch) as the limit resolution of the exposure device, and the current driving force becomes large.

Claims

1. A thin film transistor formed on an insulating substrate, comprising:

a gate electrode formed on the insulating substrate;

a gate insulating film formed to cover the gate electrode;

a source electrode and a drain electrode that are formed on the gate insulating film with a predetermined distance to sandwich the gate electrode; and

a channel layer that includes an oxide semiconductor layer which is formed on the gate insulating film sandwiched between the source electrode and the drain electrode, and one end and the other end being electrically connected respectively to the source electrode and the drain electrode, wherein

the oxide semiconductor layer has two first regions each having a first resistance value, and a second region sandwiched between the two first regions and having a second resistance value higher than the first resistance values,

a length of the second region is shorter than a length between an end part of the source electrode and an end part of the drain electrode,

the source electrode and the drain electrode include at least one metal electrode which takes oxygen away from the oxide semiconductor layer and also supplies hydrogen to the oxide semiconductor layer, and are made of laminated metal electrodes obtained by laminating a plurality of metal electrodes,

the laminated metal electrodes have stair-shaped steps that are formed to have at least a part of surfaces of the plurality of metal electrodes exposed, and

one end and the other end of the oxide semiconductor layer are formed to cover the stair-shaped steps.

2. The thin film transistor according to claim 1, wherein when a predetermined voltage is applied to the gate electrode, the length of the second region becomes longer by a length of the first region which becomes short.

3. The thin film transistor according to claim 1, wherein the metal electrode is a titanium electrode.

4. The thin film transistor according to claim 3, wherein the oxide semiconductor layer is an indium gallium zinc oxide layer, and the titanium electrode is in direct contact with the indium gallium zinc oxide layer.

5. The thin film transistor according to claim 4, wherein the length of the second region when a voltage is applied to the gate electrode is shorter than the length between the end part of the source electrode and the end part of the drain electrode by 1 μ

m to 3 μ

m (inclusive).

6. The thin film transistor according to claim 1, wherein the oxide semiconductor layer is made of a microcrystalline oxide semiconductor.

7. An active matrix-type display device that displays an image, comprising:

a display unit including a plurality of gate wirings, a plurality of source wirings orthogonal to the plurality of gate wirings, a plurality of pixel formation portions arranged in a matrix in accordance with intersections between the plurality of gate wirings and the plurality of source wirings; and

a drive circuit that drives the plurality of pixel formation portions, wherein

the drive circuit is configured by the thin film transistor according to claim 1.

8. An active matrix-type display device that displays an image, comprising:

a display unit including a plurality of gate wirings, a plurality of source wirings orthogonal to the plurality of gate wirings, a plurality of pixel formation portions arranged in a matrix in accordance with intersections between the plurality of gate wirings and the plurality of source wirings; and

a drive circuit that drives the plurality of pixel formation portions, wherein

the pixel formation portions include switching elements that are turned on or off according to signals applied to corresponding gate wirings, and

the switching elements include the thin film transistor according to claim 1.

9. A thin film transistor formed on an insulating substrate, comprising:

a gate electrode formed on the insulating substrate;

a gate insulating film formed to cover the gate electrode;

a source electrode and a drain electrode that are formed on the gate insulating film with a predetermined distance to sandwich the gate electrode; and

a channel layer that includes an oxide semiconductor layer which is formed on the gate insulating film sandwiched between the source electrode and the drain electrode, and one end and the other end being electrically connected respectively to the source electrode and the drain electrode, wherein

the oxide semiconductor layer is an indium gallium zinc oxide layer, and has two first regions each having a first resistance value, and a second region sandwiched between the two first regions and having a second resistance value higher than the first resistance values,

a length of the second region is shorter than a length between an end part of the source electrode and an end part of the drain electrode,

the source electrode and the drain electrode respectively include at least one titanium electrode which takes oxygen away from the oxide semiconductor layer and also supplies hydrogen to the oxide semiconductor layer, and

the titanium electrodes are in direct contact with the indium gallium zinc oxide layer.

10. The thin film transistor according to claim 9, wherein the source electrode is formed to cover one end of the indium gallium zinc oxide layer, and the drain electrode is formed to cover the other end of the indium gallium zinc oxide layer.

11. The thin film transistor according to claim 10, further comprising an etching stopper layer which is formed to cover the second region, on the oxide semiconductor layer sandwiched between the end part of the source electrode and the end part of the drain electrode, and

the source electrode and the drain electrode are connected respectively to the two first regions of the channel layer via contact holes formed on the etching stopper layer.

12. The thin film transistor according to claim 9, wherein one end of the indium gallium zinc oxide layer is formed to cover one end of the source electrode, and the other end of the indium gallium zinc oxide layer is formed to cover one end of the drain electrode.

13. The thin film transistor according to claim 12, wherein

the source electrode and the drain electrode include at least titanium electrode which takes oxygen away from the oxide semiconductor layer and also supplies hydrogen to the oxide semiconductor layer, and are made of laminated metal electrodes obtained by laminating a plurality of metal electrodes,

the laminated metal electrodes have stair-shaped steps that are formed to have at least a part of surfaces of the plurality of metal electrodes exposed, and

one end and the other end of the indium gallium zinc oxide layer are formed to cover the stair-shaped steps.

14. The thin film transistor according to claim 9, wherein when a predetermined voltage is applied to the gate electrode, the length of the second region becomes longer by a length of the first region which becomes short.

15. The thin film transistor according to claim 9, wherein the length of the second region when a voltage is applied to the gate electrode is shorter than the length between the end part of the source electrode and the end part of the drain electrode by 1 μ

m to 3 μ

m (inclusive).

16. The thin film transistor according to claim 9, wherein the indium gallium zinc oxide layer is made of a microcrystalline oxide semiconductor.

17. An active matrix-type display device that displays an image, comprising:

a display unit including a plurality of gate wirings, a plurality of source wirings orthogonal to the plurality of gate wirings, a plurality of pixel formation portions arranged in a matrix in accordance with intersections between the plurality of gate wirings and the plurality of source wirings; and

a drive circuit that drives the plurality of pixel formation portions, wherein

the drive circuit is configured by the thin film transistor according to claim 9.

18. An active matrix-type display device that displays an image, comprising:

a display unit including a plurality of gate wirings, a plurality of source wirings orthogonal to the plurality of gate wirings, a plurality of pixel formation portions arranged in a matrix in accordance with intersections between the plurality of gate wirings and the plurality of source wirings; and

a drive circuit that drives the plurality of pixel formation portions, wherein

the pixel formation portions include switching elements that are turned on or off according to signals applied to corresponding gate wirings, and

the switching elements include the thin film transistor according to claim 9.