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Semiconductor device and manufacturing method thereof

  • US 9,093,544 B2
  • Filed: 01/16/2014
  • Issued: 07/28/2015
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a gate insulating layer;

    an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween; and

    source and drain electrode layers in electrical contact with the oxide semiconductor layer,wherein the oxide semiconductor layer comprising a crystalline region including crystals with a grain diameter greater than or equal to 1 nm and less than or equal to 20 nm, andwherein c-axes of the crystals are oriented in a direction perpendicular to a surface of the oxide semiconductor layer.

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