Methods for manufacturing a magnetoresistive structure utilizing heating and cooling
First Claim
1. A method for manufacturing a tunnel magnetoresistive (TMR) structure, the method comprising:
- forming a reference layer on a substrate;
forming a tunnel barrier layer on the substrate;
forming a free layer on the substrate;
heating the TMR structure after forming at least the reference layer and at least a portion of the tunnel barrier layer; and
cryogenically cooling, after the heating, the TMR structure after forming the tunnel barrier layer.
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Accused Products
Abstract
This invention describes a novel tunnel magnetoresistive (TMR) deposition process that can enhance the signal-to-noise ratio (SNR) of a TMR reader. A method of manufacturing a tunnel magnetoresistive sensor includes providing a substrate; forming a first portion of a magnetic tunnel junction (MTJ) structure on the substrate; forming a second portion of the MTJ structure on the substrate; forming a tunnel barrier layer of the MTJ structure between the first portion and the second portion; heating the first portion of the MTJ structure before forming the tunnel barrier layer or after forming at least a portion of the tunnel barrier layer; and cooling the tunnel barrier layer.
597 Citations
30 Claims
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1. A method for manufacturing a tunnel magnetoresistive (TMR) structure, the method comprising:
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forming a reference layer on a substrate; forming a tunnel barrier layer on the substrate; forming a free layer on the substrate; heating the TMR structure after forming at least the reference layer and at least a portion of the tunnel barrier layer; and cryogenically cooling, after the heating, the TMR structure after forming the tunnel barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of manufacturing a tunnel magnetoresistive sensor, the method comprising:
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providing a substrate; forming a first portion of a magnetic tunnel junction (MTJ) structure on the substrate; forming a second portion of the MTJ structure on the substrate; forming a tunnel barrier layer of the MTJ structure between the first portion and the second portion; heating the first portion of the MTJ structure after forming at least a portion of the tunnel barrier layer; and cryogenically cooling, after the heating, the MTJ structure after forming the tunnel barrier layer. - View Dependent Claims (26, 27, 28, 29)
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30. A method of manufacturing a magnetic tunnel junction (MTJ) head for a magnetic storage device, the method comprising:
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providing a substrate; forming a first portion of the MTJ head on the substrate; forming a second portion of the MTJ head on the substrate; forming a tunnel barrier layer of the MTJ head between the first portion and the second portion; heating the first portion of the MTJ head after forming at least a portion of the tunnel barrier layer; and cryogenically cooling, after the heating, the MTJ head after forming the tunnel barrier layer.
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Specification