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Abrasive-free planarization for EUV mask substrates

  • US 9,097,994 B2
  • Filed: 01/25/2013
  • Issued: 08/04/2015
  • Est. Priority Date: 01/27/2012
  • Status: Expired due to Fees
First Claim
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1. A planarizing method comprising:

  • a) depositing a silicon material layer upon a substrate that includes a defect; and

    b) planarizing said silicon material layer, first with an abrasive planarizing fluid and then with an abrasive-free planarizing fluid to provide a silicon material layer from 10 to 100 nm thick over said substrate that includes a defect.

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