Method and apparatus for plasma dicing a semi-conductor wafer

  • US 9,105,705 B2
  • Filed: 03/06/2013
  • Issued: 08/11/2015
  • Est. Priority Date: 03/14/2011
  • Status: Active Grant
First Claim
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1. A method for plasma dicing a substrate, the method comprising:

  • providing a process chamber having a wall;

    providing a plasma source adjacent to the wall of the process chamber;

    providing a work piece support within the process chamber, the work piece support having an electrostatic chuck having an outer diameter;

    placing a work piece onto said work piece support, said work piece having a support film, a frame and the substrate;

    providing a mechanical partition within the process chamber, said mechanical partition being positioned between the plasma source and said work piece;

    providing a cover ring within the process chamber, said cover ring being positioned between the mechanical partition and said work piece;

    generating a plasma using the plasma source; and

    etching the work piece using the generated plasma,wherein the cover ring does not contact the work piece during the etching.

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