Chemical sensor with sidewall sensor surface
First Claim
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1. A chemical sensor comprising:
- a chemically-sensitive field effect transistor including a floating gate conductor; and
a material defining an opening overlying the floating gate conductor, the material comprising a conductive element having an inner surface defining a lower portion of a sidewall of the opening, and a dielectric on the conductive element and having an inner surface defining an upper portion of the sidewall, wherein the inner surface of the conductive element is substantially aligned with the inner surface of the dielectric.
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Abstract
In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall.
436 Citations
18 Claims
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1. A chemical sensor comprising:
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a chemically-sensitive field effect transistor including a floating gate conductor; and a material defining an opening overlying the floating gate conductor, the material comprising a conductive element having an inner surface defining a lower portion of a sidewall of the opening, and a dielectric on the conductive element and having an inner surface defining an upper portion of the sidewall, wherein the inner surface of the conductive element is substantially aligned with the inner surface of the dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a chemical sensor, the method comprising:
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forming a chemically-sensitive field effect transistor including a floating gate conductor; and forming a material defining an opening overlying the floating gate conductor, wherein forming the material comprises; forming a conductive element having an inner surface defining a lower portion of a sidewall of the opening; forming a first dielectric on the conductive element and having an inner surface defining an upper portion of the sidewall; forming a second dielectric on the floating gate conductor, the second dielectric defining a cavity extending to an upper surface of the floating gate conductor; filling the cavity with conductive material; forming the first dielectric on the conductive material; and etching the first dielectric and the conductive material to form the opening. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification