Semiconductor device and method of manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- a base insulating film over a substrate;
a pair of electrodes over the base insulating film;
an oxide semiconductor film over and in contact with the pair of electrodes;
a gate electrode over the base insulating film; and
a gate insulating film adjacent to the gate electrode and the oxide semiconductor film,wherein the pair of electrodes comprises a region in contact with the oxide semiconductor film,wherein halogen is included at least in the region, andwherein a top surface of the pair of electrodes is aligned with a portion of a top surface of the base insulating film.
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Abstract
By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film.
110 Citations
20 Claims
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1. A semiconductor device comprising:
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a base insulating film over a substrate; a pair of electrodes over the base insulating film; an oxide semiconductor film over and in contact with the pair of electrodes; a gate electrode over the base insulating film; and a gate insulating film adjacent to the gate electrode and the oxide semiconductor film, wherein the pair of electrodes comprises a region in contact with the oxide semiconductor film, wherein halogen is included at least in the region, and wherein a top surface of the pair of electrodes is aligned with a portion of a top surface of the base insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a base insulating film over a substrate; a pair of electrodes over the base insulating film; an oxide semiconductor film over and in contact with the pair of electrodes; a gate electrode over the base insulating film; a gate insulating film adjacent to the gate electrode and the oxide semiconductor film; and an interlayer insulating film over the gate electrode, wherein the pair of electrodes comprises a region in contact with the oxide semiconductor film, wherein halogen is included at least in the region, and wherein a top surface of the pair of electrodes is aligned with a portion of a top surface of the base insulating film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification