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Semiconductor device and manufacturing method thereof

  • US 9,142,683 B2
  • Filed: 11/13/2014
  • Issued: 09/22/2015
  • Est. Priority Date: 12/11/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first gate electrode;

    a gate insulating layer over the first gate electrode;

    an oxide semiconductor layer over and in contact with the gate insulating layer;

    a source electrode and a drain electrode over the oxide semiconductor layer;

    a first insulating layer over and in contact with the source electrode, the drain electrode, and a part of the oxide semiconductor layer; and

    a second insulating layer over and in contact with the first insulating layer,wherein the second insulating layer is in direct contact with the gate insulating layer in a region which surrounds the oxide semiconductor layer.

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