Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a first gate electrode;
a gate insulating layer over the first gate electrode;
an oxide semiconductor layer over and in contact with the gate insulating layer;
a source electrode and a drain electrode over the oxide semiconductor layer;
a first insulating layer over and in contact with the source electrode, the drain electrode, and a part of the oxide semiconductor layer; and
a second insulating layer over and in contact with the first insulating layer,wherein the second insulating layer is in direct contact with the gate insulating layer in a region which surrounds the oxide semiconductor layer.
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Abstract
A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide conductor containing hydrogen and oxygen vacancy, and a barrier layer which prevents diffusion of hydrogen and oxygen between an oxide conductive layer and the oxide semiconductor layer. The oxide conductive layer and the oxide semiconductor layer are electrically connected to each other through the barrier layer.
146 Citations
19 Claims
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1. A semiconductor device comprising:
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a first gate electrode; a gate insulating layer over the first gate electrode; an oxide semiconductor layer over and in contact with the gate insulating layer; a source electrode and a drain electrode over the oxide semiconductor layer; a first insulating layer over and in contact with the source electrode, the drain electrode, and a part of the oxide semiconductor layer; and a second insulating layer over and in contact with the first insulating layer, wherein the second insulating layer is in direct contact with the gate insulating layer in a region which surrounds the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a first gate electrode and a second gate electrode; a gate insulating layer over the first gate electrode and the second gate electrode; a first oxide semiconductor layer and a second oxide semiconductor layer over and in contact with the gate insulating layer, the first oxide semiconductor layer and the second oxide semiconductor layer overlapping with the first gate electrode and the second gate electrode, respectively; a first source electrode and a first drain electrode over the first oxide semiconductor layer; a second source electrode and a second drain electrode over the second oxide semiconductor layer; a first insulating layer over and in contact with the first source electrode, the first drain electrode, the second source electrode, the second drain electrode, a part of the first oxide semiconductor layer, and a part of the second oxide semiconductor layer; a second insulating layer over and in contact with the first insulating layer, the second insulating layer overlapping with the first gate electrode and the second gate electrode; an output terminal electrically connected to the first drain electrode, the second source electrode, and the second gate electrode; a first wiring configured to input a first voltage to the first source electrode; and a second wiring configured to input a second voltage to the second drain electrode, wherein the second insulating layer is in direct contact with the gate insulating layer in a region which surrounds the first oxide semiconductor layer and the second oxide semiconductor layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification