Method for producing a capacitor including an array of nanocapacitors

• US 9,165,722 B2
• Filed: 07/28/2011
• Issued: 10/20/2015
• Est. Priority Date: 07/30/2010
• Status: Expired due to Fees

• Current Assignee: Centre National De La Recherche Scientifique
• Original Assignee: Centre National De La Recherche Scientifique
• Inventors: Hanbuecken, Margrit, Moyen, Eric, Santinacci, Lionel, Arnaud D'Avitaya, Francois
• Primary Examiner(s): Talbot, Brian K
• Application Number:
  US13/813,166
• Publication Number:
  US 20130224394A1
• Time in Patent Office: 1,545 Days
• Field of Search: 427 79- 81, 427/510, 427/555, 427/558, 427/282, 29/254.1, 29/254.2
• US Class Current: 1/1
• CPC Class Codes: B05D 5/12 to obtain a coating with specific electrical properties
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01G 11/10 Multiple hybrid or EDL capacitors, e.g. arrays or modules housings, cases, encapsulations or mountings thereof H01G11/78
• CPC Class Codes: H01G 13/00 Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
• CPC Class Codes: H01G 4/01 Form of self-supporting electrodes
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01G 4/38 Multiple capacitors, i.e. structural combinations of fixed capacitors
• CPC Class Codes: H01L 28/90 having vertical extensions

Abstract

A method for producing a capacitor including an array of nanocapacitors, in which the following operations are performed using a mold having a sealed surface, as a lower surface, and a top surface through which a network of pores extend: (a) filling the pores of the mold and covering a top surface of the mold with an electrically conductive material, to form a structure including an array of nanoscale objects connected by a single substrate; (b) removing the mold; (c) depositing, on an outline of the structure obtained at the end of (b), at least one bilayer including a first layer of an electrically insulating material and a second layer of an electrically conductive material; and then (d) locally removing the at least one bilayer deposited in (c) from the substrate to form the electrical contact.

Claims

1. A process for producing a capacitor including a nanocapacitor array, the process comprising:

(a) providing a mold having a closed side, as a backside, and a frontside onto which an array of pores opens;

(b) filling pores in the mold and covering the frontside of this mold with an electrically conductive material to form a structure including an array of nano-objects connected by a supporting member;

(i₁) opening the backside of the mold, so the array of nano-objects also opens onto the backside;

then

(i₂) depositing a film of electrically conductive material on the backside of the mold to cover the backside;

then;

(c) removing the mold

(d) depositing a protrusion on the supporting member, the protrusion configured to serve as an electrical contact, followed by depositing at least one bilayer made up of a first film of an electrically insulating material and a second film of an electrically conductive material on an outline of the structure obtained in (c); and

then

(e) removing the at least one bilayer deposited in (d) locally from the supporting member to form the electrical contact.

2. The process as claimed in claim 1, in which the material filled in (b) is a metal or a polymer.

3. The process as claimed in claim 2, in which (b) comprises:

(b1) depositing a superficial film of electrically conductive material on a surface of the mold to form an electrical contact; and

(b2) carrying out electrodeposition of the deposited material on the superficial film formed beforehand.

4. The process as claimed in claim 2, in which the material to be deposited in (b) is a polymer, and (b) comprises:

(b′

1) filling the pores in the mold with a liquid comprising at least one monomer and/or at least one polymer and a curing agent;

(b′

2) spin coating the frontside of the mold with the liquid; and

(b′

3) solidifying the liquid, or baking or exposing the liquid to ultraviolet light.

5. The process as claimed in claim 1, in which the pores in the mold have a geometry and respective positions that are preset to form an organized array of pores.

6. The process as claimed in claim 5, in which a pitch separating two pores in the organized array is between 10 nm and 1 μ

m.

7. The process as claimed in claim 1, in which the mold is chosen from:

an alumina membrane, porous silicon, or nanotubes of metal oxides.

8. The process as claimed in claim 1, in which (c) includes dissolving the mold using a chemical or electrochemical process.

9. The process as claimed in claim 1, in which (d) is carried out by atomic layer deposition.

10. The process as claimed in claim 1, in which the electrically conductive material deposited in (i₂) is a metal, and the depositing is carried out by physical vapor deposition, chemical vapor deposition, or electrodeposition.

11. The process as claimed in claim 1, in which the electrically conductive material deposited in (i₂) is a polymer, and the depositing is carried out by electrodeposition or by spin coating.

12. The process as claimed in claim 1, in which, in (d), a plurality of bilayers are deposited, each bilayer including a first film of an electrically insulating material and a second film of an electrically conductive material.

13. The process as claimed in claim 1, in which the pores in the mold have a diameter of between 5 nm and 500 nm.

14. The process as claimed in claim 7, in which the nanotubes of metal oxides are chosen from titanium oxide, tantalum oxide, tungsten oxide, hafnium oxide, or zirconium oxide.