Storage element and memory

• US 9,172,029 B2
• Filed: 05/27/2014
• Issued: 10/27/2015
• Est. Priority Date: 12/12/2006
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Higo, Yutaka, Hosomi, Masanori, Ohmori, Hiroyuki, Yamamoto, Tetsuya, Yamane, Kazutaka, Oishi, Yuki, Kano, Hiroshi
• Primary Examiner(s): BERNSTEIN, ALLISON
• Application Number:
  US14/288,005
• Publication Number:
  US 20140264674A1
• Time in Patent Office: 518 Days
• Field of Search: 257/421, 257/422, 257/E43.004, 257/E43.005, 365/158, 365/171
• US Class Current: 1/1
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Claims

1. A storage element comprising:

a storage layer which stores information based on a magnetization state of a magnetic material, wherein the magnetization state is configured to be changed by passing a current through the means for storing information;

a means for increasing spin pumping;

a means for suppressing spin pumping, wherein the means for suppressing spin pumping is provided between the means for increasing spin pumping and the storage layer; and

a cap layer provided directly adjacent to the means for increasing spin pumping opposite the means for suppressing spin pumping.

2. The storage element according to claim 1, wherein the storage layer includes a free layer, a tunnel insulating layer, and a fixed magnetization layer, wherein the fixed magnetization layer comprises an exchange-bias layered ferromagnetic structure including two ferromagnetic layers that are antiferromagnetically coupled with a nonmagnetic layer in between and an antiferromagentic layer is positioned adjacent to one of the ferromagnetic layers.

3. The storage element according to claim 2, wherein ferromagnetic layers forming the storage layer include CoFeB as a main component.

4. The storage element according to claim 3, wherein a content of a nonmagnetic element in the storage layer is 1 atom % or greater and 20 atom % or less.

5. The storage element according to claim 1, wherein the means for suppressing spin pumping comprises an oxide.

6. The storage element according to claim 1, wherein the means for suppressing spin pumping comprises a nitride.

7. The storage element according to claim 1, wherein the means for suppressing spin pumping comprises a fluoride.

8. The storage element according to claim 1, wherein the means for suppressing spin pumping is provided directly adjacent to the means for increasing spin pumping, and the means for suppressing spin pumping is provided directly adjacent to the storage layer.

9. The storage element according to claim 1, wherein an area of the storage element is less than or equal to 0.04 μ

m².

10. A memory comprising:

a storage element; and

two types of mutually intersecting lines,

wherein the storage element includes;

a storage layer which stores information based on a magnetization state of a magnetic material, wherein the magnetization state is configured to be changed by passing a current through the storage layer;

a means for increasing spin pumping;

a means for suppressing spin pumping, wherein the means for suppressing spin pumping is provided between the means for increasing spin pumping and the storing layer; and

a cap layer provided directly adjacent to the means for increasing spin pumping opposite the means for suppressing spin pumping.

11. The storage element according to claim 10, wherein the storage layer includes a free layer, a tunnel insulating layer, and a fixed magnetization layer, wherein the fixed magnetization layer comprises an exchange-bias layered ferromagnetic structure including two ferromagnetic layers that are antiferromagnetically coupled with a nonmagnetic layer in between and an antiferromagentic layer is positioned adjacent to one of the ferromagnetic layers.

12. The storage element according to claim 11, wherein ferromagnetic layers forming the storage layer include CoFeB as a main component.

13. The storage element according to claim 12, wherein a content of a nonmagnetic element in the storage layer is 1 atom % or greater and 20 atom % or less.

14. The storage element according to claim 10, wherein the means for suppressing spin pumping comprises an oxide.

15. The storage element according to claim 10, wherein the means for suppressing spin pumping comprises a nitride.

16. The storage element according to claim 10, wherein the means for suppressing spin pumping comprises a fluoride.

17. The storage element according to claim 10, wherein the means for suppressing spin pumping is provided directly adjacent to the means for increasing spin pumping, and the means for suppressing spin pumping is provided directly adjacent to the storage layer.

18. The storage element according to claim 10, wherein an area of the storage element is less than or equal to 0.04 μ

m².