Semiconductor device and manufacturing method thereof

• US 9,177,242 B2
• Filed: 06/25/2013
• Issued: 11/03/2015
• Est. Priority Date: 12/27/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tokunaga, Hajime
• Primary Examiner(s): Warren, Matthew E
• Application Number:
  US13/926,320
• Publication Number:
  US 20130284816A1
• Time in Patent Office: 861 Days
• Field of Search: 257/59, 257/72, 257/629, 257/E33.056, 349149-152
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/167 by electrophoresis
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06K 19/07707 the visual interface being a display, e.g. LCD or electronic ink
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

To provide a wireless identification semiconductor device provided with a display function, which is capable of effectively utilizing electric power supplied by an electromagnetic wave. The following are included: an antenna; a power source generating circuit electrically connected to the antenna; an IC chip circuit and a display element electrically connected to the power source generating circuit; a first TFT provided in the power source generating circuit; a second TFT provided in the IC chip circuit; a third TFT provided in the display element; an insulating film provided to cover the first to third TFTs; a first source electrode and a first drain electrode, a second source electrode and a second drain electrode, and a third source electrode and a third drain electrode which are formed over the insulating film; and a pixel electrode electrically connected to the third source electrode or the third drain electrode. The first source electrode or the first drain electrode is electrically connected to the antenna.

Claims

1. A semiconductor device comprising:

an antenna;

an integrated circuit including an identification number, the integrated circuit operationally connected to the antenna;

a display element including a thin film transistor over a substrate;

a rectifier circuit for generating a direct voltage from an electromagnetic wave receive by the antenna;

a constant voltage circuit for receiving the direct voltage from the rectifier circuit and supplying a first voltage to the integrated circuit; and

a displaying power source circuit for receiving the direct voltage from the rectifier circuit and supplying a second voltage to the display element,

wherein the direct voltage is supplied from the rectifier circuit to the displaying power source circuit without passing through the constant voltage circuit.

2. The semiconductor device according to claim 1, wherein the display element includes a display portion, a gate driver and a source driver.

3. The semiconductor device according to claim 1, wherein the second voltage is higher than the first voltage.

4. The semiconductor device according to claim 1, wherein the integrated circuit has a unique identification number.

5. The semiconductor device according to claim 1, wherein each of the integrated circuit and the power source generating circuit includes a thin film transistor over the substrate.

6. A semiconductor device comprising:

an antenna;

an integrated circuit including an identification number, the integrated circuit operationally connected to the antenna;

a display element over a substrate;

a rectifier circuit for generating a direct voltage from an electromagnetic wave received by the antenna;

a constant voltage circuit for receiving the direct voltage from the rectifier circuit and supplying a first voltage to the integrated circuit; and

a displaying power source circuit for receiving the direct voltage from the rectifier circuit and supplying a second voltage to the display element,

wherein the direct voltage is supplied from the rectifier circuit to the displaying power source circuit without passing through the constant voltage circuit.

7. The semiconductor device according to claim 6, wherein the display element includes a display portion, a gate driver and a source driver.

8. The semiconductor device according to claim 6, wherein the second voltage is higher than the first voltage.

9. The semiconductor device according to claim 6, wherein the integrated circuit has a unique identification number.

10. The semiconductor device according to claim 6, wherein each of the integrated circuit and the power source generating circuit includes a thin film transistor over the substrate.

11. A semiconductor device comprising:

an antenna;

an integrated circuit;

a display element over a substrate, the display element comprising an electrophoresis element;

a rectifier circuit for generating a direct voltage from an electromagnetic wave received by the antenna;

a constant voltage circuit for receiving the direct voltage from the rectifier circuit and supplying a first voltage to the integrated circuit; and

a displaying power source circuit for receiving the direct voltage from the rectifier circuit and supplying a second voltage to the display element,

wherein the direct voltage is supplied from the rectifier circuit to the displaying power source circuit without passing through the constant voltage circuit.

12. The semiconductor device according to claim 11, wherein the display element includes a display portion, a gate driver and a source driver.

13. The semiconductor device according to claim 11, wherein the second voltage is higher than the first voltage.

14. The semiconductor device according to claim 11, wherein the integrated circuit has a unique identification number.

15. The semiconductor device according to claim 11, wherein each of the integrated circuit and the power source generating circuit includes a thin film transistor over the substrate.