Semiconductor device and method for manufacturing semiconductor device
First Claim
1. A semiconductor device comprising a pixel portion and a driver circuit portion each including a transistor, the transistor comprising:
- a first conductive layer;
a first insulating layer over the first conductive layer;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over the oxide semiconductor layer;
a second conductive layer and a third conductive layer over the second insulating layer;
a third insulating layer over the second conductive layer and the third conductive layer; and
a fourth conductive layer over the third insulating layer,wherein a first length of the second insulating layer is smaller than a first length of the first conductive layer in a channel length direction, andwherein a second length of the second insulating layer is smaller than a second length of the first conductive layer in a channel width direction.
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Abstract
An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
167 Citations
11 Claims
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1. A semiconductor device comprising a pixel portion and a driver circuit portion each including a transistor, the transistor comprising:
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a first conductive layer; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a second insulating layer over the oxide semiconductor layer; a second conductive layer and a third conductive layer over the second insulating layer; a third insulating layer over the second conductive layer and the third conductive layer; and a fourth conductive layer over the third insulating layer, wherein a first length of the second insulating layer is smaller than a first length of the first conductive layer in a channel length direction, and wherein a second length of the second insulating layer is smaller than a second length of the first conductive layer in a channel width direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification
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- Resources
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Sakata, Junichiro, Kuwabara, Hideaki, Miyake, Hiroyuki
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Primary Examiner(s)Ullah, Elias M
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Application NumberUS14/620,409Publication NumberTime in Patent Office271 DaysField of Search257/59, 257/71, 257/43, 257/E21.704, 257/E29.296, 257/E27.111, 438/158, 438/104US Class Current1/1CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1225 with semiconductor material...H01L 27/124 with a particular compositi...H01L 27/1262 with a particular formation...H01L 29/45 Ohmic electrodesH01L 29/78606 with supplementary region o...H01L 29/7869 having a semiconductor body...
