Polycrystalline CdTe thin film semiconductor photovoltaic cell structures for use in solar electricity generation
First Claim
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1. A method for forming a photovoltaic device, comprising:
- forming a first layer over a substrate, the first layer comprising tellurium (Te) and zinc (Zn) and not containing cadmium (Cd);
forming a second layer over the first layer, the second layer comprising Cd and Te; and
forming a third layer over the second layer, the third layer comprising Cd, Zn and Te.
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Abstract
Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
109 Citations
21 Claims
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1. A method for forming a photovoltaic device, comprising:
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forming a first layer over a substrate, the first layer comprising tellurium (Te) and zinc (Zn) and not containing cadmium (Cd); forming a second layer over the first layer, the second layer comprising Cd and Te; and forming a third layer over the second layer, the third layer comprising Cd, Zn and Te. - View Dependent Claims (2, 3, 4, 5)
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6. A method for forming a photovoltaic device, comprising:
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forming a low ohmic ZnTe;
N++ contact layer over a superstrate;forming a p-type CdTe layer over the low ohmic ZnTe;
N++ layer;forming an n-type, compositionally graded, CdZnTe layer over the p-type CdTe to form a p-n heterojunction; and forming a low ohmic CdZnTe;
In++ contact layer over the p-n heterojunction. - View Dependent Claims (7)
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8. A method for forming a photovoltaic device, comprising:
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forming a low ohmic ZnTe;
N++ contact layer over a superstrate;forming an intrinsic CdTe (i-CdTe) layer over the low ohmic ZnTe;
N++ layer; andforming a low ohmic CdZnTe;
In++ contact layer over the i-CdTe layer. - View Dependent Claims (9)
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10. A method for forming a high performance single junction photovoltaic device, comprising:
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forming a low ohmic CdTe;
In++ contact layer over a superstrate;forming an n-type CdTe layer over the low ohmic CdTe;
In++ layer;forming a p-type, compositionally graded, CdZnTe layer over the n-type CdTe to form a p-n heterojunction; and forming a low ohmic CdZnTe;
As++ contact layer over the p-n heterojunction. - View Dependent Claims (11)
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12. A method for forming a photovoltaic device, comprising
forming an n-type layer having Cd and Te; -
forming an intrinsic CdTe layer over the n-type layer; and forming a p-type layer having Te and one or more of Cd and Zn over the intrinsic CdTe layer. - View Dependent Claims (13, 14)
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15. A method for forming a photovoltaic device, comprising:
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forming a first layer over a substrate that does not contain CdTe, the first layer comprising cadmium (Cd) and tellurium (Te), wherein the substrate is amorphous; forming a second layer over the first layer, the second layer comprising Cd, Zn and Te; and forming a third layer over the second layer, the third layer comprising Te. - View Dependent Claims (16, 17)
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18. A method for forming a photovoltaic device, comprising:
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forming a first layer over a substrate, the first layer comprising tellurium (Te) and cadmium (Cd), wherein the first layer does not contain zinc (Zn), wherein the substrate is amorphous; forming a second layer over the first layer, the second layer comprising Cd, Zn and Te; and forming a third layer over the second layer, the third layer comprising Te. - View Dependent Claims (19, 20, 21)
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Specification