Semiconductor component with dynamic behavior
First Claim
1. A semiconductor component comprising:
- a semiconductor body having a first side and a second side;
a drift zone;
a first semiconductor zone doped complementary to the drift zone and adjacent to the drift zone in a direction of the first side, the first semiconductor zone forming a body zone;
a second semiconductor zone of the same conduction type as the drift zone and adjacent to the drift zone in a direction of the second side, the second semiconductor zone forming a drain zone;
a source zone doped complementary to the body zone and separated from the drift zone by the body zone;
a gate electrode arranged adjacent to the body zone and dielectrically insulated from the body zone by a gate dielectric layer;
at least two trenches arranged in the semiconductor body and extending into the semiconductor body proceeding from the first side in a vertical direction into the drift zone and arranged at a distance from one another in a lateral direction of the semiconductor body;
a field electrode arranged in the at least two trenches adjacent to the drift zone, the field electrode connected to the source zone; and
a field dielectric layer dielectrically insulating the field electrode from the drift zone in a vertical direction and a lateral direction of the semiconductor body and being thicker than the gate dielectric layer,wherein the at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction;
wherein a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and wherein a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches; and
wherein a doping concentration in a section of the drift zone arranged between the trenches is between 5·
1015 cm3 and 1·
1017 cm−
3.
1 Assignment
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Accused Products
Abstract
One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.
39 Citations
10 Claims
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1. A semiconductor component comprising:
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a semiconductor body having a first side and a second side; a drift zone; a first semiconductor zone doped complementary to the drift zone and adjacent to the drift zone in a direction of the first side, the first semiconductor zone forming a body zone; a second semiconductor zone of the same conduction type as the drift zone and adjacent to the drift zone in a direction of the second side, the second semiconductor zone forming a drain zone; a source zone doped complementary to the body zone and separated from the drift zone by the body zone; a gate electrode arranged adjacent to the body zone and dielectrically insulated from the body zone by a gate dielectric layer; at least two trenches arranged in the semiconductor body and extending into the semiconductor body proceeding from the first side in a vertical direction into the drift zone and arranged at a distance from one another in a lateral direction of the semiconductor body; a field electrode arranged in the at least two trenches adjacent to the drift zone, the field electrode connected to the source zone; and a field dielectric layer dielectrically insulating the field electrode from the drift zone in a vertical direction and a lateral direction of the semiconductor body and being thicker than the gate dielectric layer, wherein the at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction; wherein a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and wherein a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches; and wherein a doping concentration in a section of the drift zone arranged between the trenches is between 5·
1015 cm3 and 1·
1017 cm−
3. - View Dependent Claims (2, 3, 4, 5)
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6. A method of forming a semiconductor component comprising:
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providing a semiconductor body having a first side and a second side; forming a drift zone; forming a first semiconductor zone doped complementary to the drift zone and adjacent to the drift zone in a direction of the first side, the first semiconductor zone forming a body zone; forming a second semiconductor zone of the same conduction type as the drift zone and adjacent to the drift zone in a direction of the second side, the second semiconductor zone forming a drain zone; forming a source zone doped complementary to the body zone and separated from the drift zone by the body zone; forming a gate electrode arranged adjacent to the body zone and dielectrically insulated from the body zone by a gate dielectric layer; arranging at least two trenches in the semiconductor body and extending into the semiconductor body proceeding from the first side in a vertical direction into the drift zone and at a distance from one another in a lateral direction of the semiconductor body; arranging a field electrode in the at least two trenches adjacent to the drift zone, the field electrode connected to the source zone; forming a field dielectric layer dielectrically insulating the field electrode from the drift zone in a vertical direction and a lateral direction of the semiconductor body and being thicker than the gate dielectric layer; arranging the at least two trenches at a distance from the second semiconductor zone in the vertical direction; arranging the trenches and the second semiconductor zone such that a distance between them is greater than 1.5 times the mutual distance between the trenches; providing a doping concentration of the drift zone in a section between the trenches and in the second semiconductor zone such that they differ by at most 35% from a minimum doping concentration in a section between the trenches; and providing a doping concentration between 5·
1015 cm−
3 and 1·
1017 cm−
3 in the section of the drift zone between the trenches. - View Dependent Claims (7, 8, 9, 10)
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Specification