Body-biased switching device

  • US 9,214,932 B2
  • Filed: 02/11/2013
  • Issued: 12/15/2015
  • Est. Priority Date: 02/11/2013
  • Status: Active Grant
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First Claim
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1. A circuit configured to switch radio-frequency (“

  • RF”

    ) signals, the circuit comprising;

    a field-effect transistor (“

    FET”

    ) including a source terminal, a gate terminal, a drain terminal, and a body terminal; and

    a body-bias circuit coupled with the source terminal, the drain terminal and the body terminal, the body-bias circuit having a first circuit element coupled between the source terminal and the body terminal and a second circuit element coupled between the drain terminal and the body terminal, the first and second circuit elements to;

    derive a negative bias voltage based on an RF signal through the first and second circuit elements; and

    provide the negative bias voltage to the body terminal when the FET is in an off state.

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