Solid-state image capturing device and electronic device
First Claim
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1. A method comprising:
- forming a semiconductor substrate having a photosensitive surface including a plurality of pixels with respective photoelectric converters; and
forming a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance that varies depending on an intensity of applied light in a predetermined wavelength range,wherein,the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the plurality of pixels are read from all of the plurality of pixels.
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Abstract
A solid-state image capturing device including: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.
24 Citations
19 Claims
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1. A method comprising:
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forming a semiconductor substrate having a photosensitive surface including a plurality of pixels with respective photoelectric converters; and forming a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance that varies depending on an intensity of applied light in a predetermined wavelength range, wherein, the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the plurality of pixels are read from all of the plurality of pixels. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 15, 16, 17)
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12. A method comprising:
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forming a semiconductor substrate having a photosensitive surface including a plurality of pixels with respective photoelectric converters; and forming a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film comprising a photochromic material having a light transmittance that varies depending on an intensity of applied light in a predetermined wavelength range, wherein, the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the plurality of pixels are read from all of the plurality of pixels, and the photochromic material includes a hexarylbisimidazole derivative.
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18. A method comprising:
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forming a solid-state image capturing device including an image capturing unit by (a) forming a semiconductor substrate having a photosensitive surface including a plurality of pixels with respective photoelectric converters, and (b) forming a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance that varies depending on an intensity of applied light in a predetermined wavelength range; providing an optical system configured to guide incident light to the image capturing unit of the solid-state image capturing device; providing a signal processing circuit configured to process an output signal from the solid-state image capturing device; and assembling the solid-state image capturing device, the optical system, and the signal processing circuit in an electronic device, wherein, the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the plurality of pixels are read from all of the plurality of pixels. - View Dependent Claims (19)
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Specification