Active layer ion implantation method and active layer ion implantation method for thin-film transistor

• US 9,230,811 B2
• Filed: 08/28/2013
• Issued: 01/05/2016
• Est. Priority Date: 09/28/2012
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Ma, Zhanjie
• Primary Examiner(s): PHAM, THANHHA S
• Application Number:
  US14/011,985
• Publication Number:
  US 20140094002A1
• Time in Patent Office: 860 Days
• Field of Search: 438/174, 438/217, 438/289, 438/291, 438/514, 438/531
• US Class Current: 1/1
• CPC Class Codes: H01L 21/24 Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body H01L21/182 takes precedence
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/2652 Through-implantation
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate

Abstract

Disclosed are an active layer ion implantation method and an active layer ion implantation method for thin-film transistor. The active layer ion implantation method comprises: applying a photoresist on the active layer; and implanting ions into the active layer through the photoresist.

Claims

1. An active layer ion implantation method for TFT comprising:

applying a photoresist on an active layer; and

exposing the photoresist using a TFT source/drain electrode mask for forming the TFT source/drain electrode pattern to form a photoresist completely retained region and a photoresist partially retained region;

wherein an exposed region of the TFT source/drain electrode mask corresponds to the photoresist-partially-retained region and a graphics region of the TFT source/drain electrode mask corresponds to the photoresist-completely-retained region; and

implanting ions into a first region of the active layer that corresponds to a TFT channel region through the photoresist-partially retained region, wherein the photoresist-partially-retained region has a thickness designed to allow the ions to pass through the photoresist-partially-retained region and the photoresist completely retained region has a thickness designed to prevent the ions from passing through the photoresist completely retained region.

2. The method of claim 1, wherein in condition that ions are implanted into a second region of the active layer that corresponds to the TFT source/drain electrode region, the method further comprises:

heavily reverse ion-doping the second region of the active layer that corresponds to the TFT source/drain electrode region.

3. The method of claim 1, wherein after ion implantation is finished, the method further comprises:

peeling off the photoresist.