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Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition

  • US 9,240,319 B2
  • Filed: 12/29/2010
  • Issued: 01/19/2016
  • Est. Priority Date: 02/03/2010
  • Status: Active Grant
First Claim
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1. A method for the deposition of a chalcogenide-containing film, comprising the steps of:

  • a) introducing into a reactor containing at least one substrate a vapor of at least one chalcogenide-containing precursor selected from the group consisting of Me2Ge(TetBu)2, tBu2Ge(TetBu)2, Me2Ge(TeSiMe3)2, (Me3Si)2Ge(TeSiMe3)2, Me2Si(TeMe)2, Me2Si(TetBu)2, tBu2Si(TetBu)2, Me2Si(TeSiMe3)2, (Me3Si)2Si(TeSiMe3)2, MeGe(TeMe)3, MeGe(TetBu)3, (SiMe3)Ge(TeSiMe3)3, MeSi(TeMe)3, MeSi(TetBu)3, and (SiMe3)Si(TeSiMe3); and

    b) depositing at least part of the at least one chalcogenide-containing precursor onto the at least one substrate to form a chalcogenide-containing film on at least one surface of the at least one substrate using a vapor deposition process.

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