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Method of fabricating piezoelectric material with selected c-axis orientation

  • US 9,243,316 B2
  • Filed: 01/22/2010
  • Issued: 01/26/2016
  • Est. Priority Date: 01/22/2010
  • Status: Active Grant
First Claim
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1. A method of fabricating a piezoelectric material comprising a first component and a second component, the method comprising:

  • providing a substrate;

    initially flowing hydrogen over the substrate;

    after the initially flowing of the hydrogen over the substrate,flowing the first component to form the piezoelectric material over a surface of a target comprising the second component;

    sputtering the piezoelectric material from the target onto the substrate; and

    flowing the hydrogen over the substrate during the sputtering at a rate sufficient to cause a piezoelectric film having a defined polarity to be formed over the substrate, whereina seed layer is not formed over the substrate prior to the sputtering.

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