Method for fabricating array substrate of display using multiple photoresists
First Claim
1. An array substrate comprising a substrate;
- a plate electrode, a gate electrode, a gate line, a gate insulating film, a semiconductor silicon island, a source electrode, a drain electrode, a data line, a slit electrode formed on the substrate, and the substrate is also provided with a gate line through hole and a data line through hole, whereinthe gate electrode and the gate line comprise a first transparent conductive material and a gate metal material stacked sequentially;
the slit electrode is directly connected to the drain electrode;
a second transparent conductive material is connected to the gate line through the gate line through hole; and
connected to the data line through the data line through hole,wherein the gate insulating film is arranged between the gate electrode and the semiconductor silicon island as well as between the plate electrode and the slit electrode.
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Abstract
A fabricating method of an array substrate, an array substrate and a display device are provided. The array substrate includes a substrate; a plate electrode, a gate electrode, a gate line, a gate insulating film, semiconductor silicon islands, a source electrode, a drain electrode, a data line, a slit electrode formed on the substrate, and the substrate is also provided with a gate line through hole and a data line through hole. The gate electrode and the gate line include the first transparent conductive material and gate metal material stacked sequentially; the slit electrode is directly connected to the drain electrode; a second transparent conductive material is connected to the gate line through the gate line through hole; and connected to the data line through the data line through hole.
2 Citations
18 Claims
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1. An array substrate comprising a substrate;
- a plate electrode, a gate electrode, a gate line, a gate insulating film, a semiconductor silicon island, a source electrode, a drain electrode, a data line, a slit electrode formed on the substrate, and the substrate is also provided with a gate line through hole and a data line through hole, wherein
the gate electrode and the gate line comprise a first transparent conductive material and a gate metal material stacked sequentially; the slit electrode is directly connected to the drain electrode; a second transparent conductive material is connected to the gate line through the gate line through hole; and
connected to the data line through the data line through hole,wherein the gate insulating film is arranged between the gate electrode and the semiconductor silicon island as well as between the plate electrode and the slit electrode. - View Dependent Claims (2, 3, 4, 5)
- a plate electrode, a gate electrode, a gate line, a gate insulating film, a semiconductor silicon island, a source electrode, a drain electrode, a data line, a slit electrode formed on the substrate, and the substrate is also provided with a gate line through hole and a data line through hole, wherein
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6. A display device comprising an array substrate comprising a substrate, a plate electrode, a gate electrode, a gate line, a gate insulating film, a semiconductor silicon island, a source electrode, a drain electrode, a data line, a slit electrode formed on the substrate, and the substrate is also provided with a gate line through hole and a data line through hole, wherein
the gate electrode and the gate line comprise a first transparent conductive material and a gate metal material stacked sequentially; -
the slit electrode is directly connected to the drain electrode; a second transparent conductive material is connected to the gate line through the gate line through hole; and
connected to the data line through the data line through hole,wherein the gate insulating film is arranged between the gate electrode and the semiconductor silicon island as well as between the plate electrode and the slit electrode. - View Dependent Claims (7, 8, 9, 10)
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11. A fabricating method of an array substrate, comprising following steps of:
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forming a first transparent conductive film and a gate metal film sequentially, forming a first photoresist on the gate metal film, forming a pattern comprising a gate electrode, a gate line, and a plate electrode by a patterning process, and keeping a part of the first photoresist at a position corresponding to a gate line through hole; forming a gate insulating film, a semiconductor film and a source-drain metal film sequentially; removing the first photoresist at the position corresponding to the gate line through hole, and at the same time removing the gate insulating film, the semiconductor film and the source-drain metal film formed above the first photoresist at a position corresponding to the gate line through hole; forming a second photoresist, and forming a pattern comprising a source electrode, a drain electrode, a data line and a semiconductor silicon island by a patterning process; and forming a second transparent conductive film, a third photoresist, and forming a pattern comprising a slit electrode by a patterning process. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification