Light emitting device, light emitting device package

• US 9,276,175 B2
• Filed: 12/28/2010
• Issued: 03/01/2016
• Est. Priority Date: 12/29/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Hyung Jo, Kim, Sun Kyung, Choi, Woon Kyung
• Primary Examiner(s): Li, Meiya
• Application Number:
  US12/979,673
• Publication Number:
  US 20110156073A1
• Time in Patent Office: 1,890 Days
• Field of Search: 257/79, 257/98, 257/E33.011, 257/E33.06, 257/E33.061, 257/E33.067, 257/E33.068, 257/E33.069, 257/E33.072, 257/E33.073, 428/29, 428/31, 428/30, 428/69, 428/74, 428/FOR.415, 428/FOR.416, 372/46.01, 372/46.014, 372/45.01, 372/49.01, 372/50.11, 372/64, 372/103, 372/107, 359/298, 359/299, 359/308, 359/359, 359/588, 362/610, 362/12, 362/555, 362/583, 362/560
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer.

Claims

1. A light emitting device comprising:

a light emitting structure including a first conductive type semiconductor layer,

a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a support layer on the light emitting structure;

a filter layer on the support layer; and

an air gap inter-disposed between the light emitting structure and the filter layer,

wherein the filter layer comprises;

a first dielectric layer having a first refractive index; and

a second dielectric layer on the first dielectric layer, the second dielectric layer having a second refractive index different from the first refractive index,

wherein an outer side surface of the support layer is vertically aligned with an outer side surface of the filter layer;

wherein a lateral width of the air gap is greater than a lateral width of the support layer, and

wherein all top surfaces of the support layer directly contact a bottom surface of the filter layer.

2. The light emitting device according to claim 1, wherein the support layer comprises one of copper (Cu) and gold (Au).

3. The light emitting device according to claim 1, wherein a thickness of the first dielectric layer and a thickness of the second dielectric layer are both λ

/(4n×

cosθ

), where λ

is a wavelength of long-wavelength light to be reflected, n is a refractive index of the first or the second dielectric layer, respectively, and θ

is an angle of incident light.

4. The light emitting device according to claim 1, further comprising a phosphor layer on the filter layer.

5. The light emitting device according to claim 1, further comprising:

at least one electrode on the light emitting structure; and

a conductive or non-conductive substrate under the light emitting structure.

6. The light emitting device according to claim 1, wherein the air gap is flush with the support layer.

7. The light emitting device according to claim 1, wherein the support layer is only between a periphery of the filter layer and a periphery of the light emitting structure.

8. The light emitting device according to claim 1, wherein a maximum lateral width of the air gap is greater than a maximum lateral width of the support layer.

9. A light emitting device comprising:

a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a support layer on the light emitting structure;

a filter layer on the support layer, and

an air gap inter-disposed between the light emitting structure and the filter layer,

wherein a topmost surface of the support layer is flush with a bottom most surface of the filter layer,

wherein a lateral width of the air gap is greater than a lateral width of the support layer, and

wherein all top surfaces of the support layer directly contact a bottom surface of the filter layer.

10. The light emitting device according to claim 9, further comprising a phosphor layer on the filter layer.

11. The light emitting device according to claim 10, wherein the phosphor layer comprises a substantially flat top surface.

12. The light emitting device according to claim 9, further comprising:

at least one electrode on the light emitting structure; and

a conductive or non-conductive substrate under the light emitting structure.

13. The light emitting device according to claim 9, wherein the air gap is flush with the support layer.

14. The light emitting device according to claim 9, wherein the support layer is only between a periphery of the filter layer and a periphery of the light emitting structure.

15. The light emitting device according to claim 9, wherein a maximum lateral width of the air gap is greater than a maximum lateral width of the support layer.

16. A light emitting device package comprising:

a package body;

at least one electrode layer on the package body; and

a light emitting device electrically connected to the electrode layer,

wherein the light emitting device comprises;

a light emitting structure including a first conductive type semiconductor layer,

a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a support layer on the light emitting structure;

a filter layer on the support layer; and

an air gap inter-disposed between the light emitting structure and the filter layer,

wherein the filter layer comprises;

a first dielectric layer having a first refractive index; and

a second dielectric layer on the first dielectric layer, the second dielectric layer having a second refractive index different from the first refractive index,

wherein an outer side surface of the support layer is vertically aligned with an outer side surface of the filter layer;

wherein a lateral width of the air gap is greater than a lateral width of the support layer, and

wherein all to surfaces of the support layer directly contact a bottom surface of the filter.