Semiconductor material doping

  • US 9,287,442 B2
  • Filed: 03/14/2013
  • Issued: 03/15/2016
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a group III nitride semiconductor structure including a quantum well and an adjacent barrier, the method comprising:

  • selecting a group III nitride material for the adjacent barrier such that the adjacent barrier has a transparency of at least a target transparency to ultraviolet radiation of a target wavelength;

    selecting a target valence band discontinuity between the quantum well and the adjacent barrier, a target quantum well doping level for a quantum well dopant in the quantum well, and a target barrier doping level for a barrier dopant in the adjacent barrier to facilitate a real space transfer of holes across the barrier; and

    forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, an actual quantum well doping level corresponding to the target quantum well doping level, and an actual barrier doping level corresponding to the target barrier doping level, wherein the adjacent barrier is formed of the selected group III nitride material.

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