Wafer-level light emitting diode package and method of fabricating the same

• US 9,293,664 B2
• Filed: 07/31/2015
• Issued: 03/22/2016
• Est. Priority Date: 09/24/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Seo, Won Cheol, Cho, Dae Sung
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US14/815,433
• Publication Number:
  US 20150340579A1
• Time in Patent Office: 235 Days
• Field of Search: 257 88-103
• US Class Current: 1/1
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0075 relating to heat extraction or cooling elements
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/42 : Transparent materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Claims

1. A light emitting diode (LED) package, comprising:

a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer;

a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected to the first conductive type semiconductor layer via some of the plurality of contact holes;

a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically connected to the second conductive type semiconductor layer; and

a protective insulation layer covering a sidewall of the first conductive type semiconductor layer and the second conductive type semiconductor layer,

wherein the protective insulation layer includes insulation layers having different indices of refraction from each other.

2. The LED package of claim 1, further comprising a wavelength convertor arranged over a second side of the semiconductor stack, the second side being opposite to the first side of the semiconductor stack,

wherein the wavelength convertor comprises a phosphor sheet or an impurity-doped material.

3. The LED package of claim 1, further comprising a transparent conductive oxide film contact layer or a reflective metal layer over the second conductive type semiconductor layer

a part of the transparent conductive oxide film contact layer or the reflective metal layer is formed between the second conductive type semiconductor layer and the protective insulation layer.

4. The LED package of claim 3, wherein the transparent conductive oxide film contact layer includes an ITO (Indium Tin Oxide).

5. The LED package of claim 4, wherein at least one of the contact holes has a circular shape, and

wherein the plurality of the contact holes are arranged along at least one side surface of the LED package.

6. A light emitting diode (LED) module, comprising:

a circuit board;

a LED package arranged over the circuit board without bonding wires, wherein the LED package includes;

a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer;

a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected to the first conductive type semiconductor layer via some of the plurality of contact holes;

a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically connected to the second conductive type semiconductor layer; and

a protective insulation layer covering a sidewall of the first conductive type semiconductor layer and the second conductive type semiconductor layer,

wherein the protective insulation layer includes insulation layers having different indices of refraction from each other; and

a lens to adjust an orientation angle of light emitted from the LED package.

7. The LED module of claim 6, wherein the circuit board comprises a metal core printed circuit board (MC-PCB), and the LED packages is arranged over the MC-PCB.

8. A light emitting diode (LED) module, comprising:

a circuit board;

a LED package bonded on the circuit board without bonding wires;

wherein the LED package comprising

a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer;

a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected to the first conductive type semiconductor layer via some of the plurality of contact holes;

a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically connected to the second conductive type semiconductor layer; and

a protective insulation layer covering a sidewall of the first conductive type semiconductor layer.

9. The LED module of claim 8, further comprising a wavelength converter over the opposite side of the LED package to the first and second electrode pads,

wherein the wavelength convertor comprises a phosphor sheet or an impurity-doped material.

10. The LED module of claim 9, wherein each area of the first and second pads has an area not less than ⅓

of the LE package.

11. The LED module of claim 8, further comprises a lens to adjust an orientation angle of light emitted from the LED package.

12. The LED module of claim 8, wherein the protective insulation layer includes insulation layers having different indices of refraction from each other.

13. The LED module of claim 12, further comprising a transparent conductive oxide film contact layer or a reflective metal layer over the second conductive type semiconductor layer;

and

a first part of the protective insulation layer covering the contact layer.

14. The LED module of claim 13, wherein a second part of the protective insulation layer covers the sidewall of the first conductive type semiconductor layer, the second part of the protective insulation layer contacts the first part of the protective insulation layer.

15. The LED module of claim 14, wherein each area of the first and second pads is not less than ⅓

of area of the LED package.

16. The LED module of claim 15, further comprising a wavelength convertor the opposite side of the LED package to the first and second electrode pads,

wherein the wavelength converter comprises a phosphor sheet or an impurity-doped material.

17. The LED module of claim 16, at least one of the contact holes has a circular shape, and

wherein the plurality of the contact holes are arranged along at least one side surface of the LED package.

18. The LED module of claim 17, further comprising a lens to adjust an orientation angle of light emitted from the LED package.

19. The LED module of claim 18, wherein the circuit board comprises a metal core printed circuit board (MC-PCB), and a plurality of the LED packages is arranged on the MC-PCB.