CMOS based TX/RX switch

• US 9,312,820 B2
• Filed: 09/23/2013
• Issued: 04/12/2016
• Est. Priority Date: 09/23/2012
• Status: Active Grant

• Current Assignee: DSP Group Ltd. (Synaptics Incorporated)
• Original Assignee: DSP Group Ltd. (Synaptics Incorporated)
• Inventors: Mostov, Alexander, Hasson, Yaron, Pongratz, Ron, Betzalel, Sharon
• Primary Examiner(s): Wendell, Andrew
• Application Number:
  US14/034,175
• Publication Number:
  US 20140087673A1
• Time in Patent Office: 932 Days
• Field of Search: 455/78, 455/82, 455/83, 455/550.1
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01F 19/04 Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range resonant circuits H03H
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01F 27/29 Terminals; Tapping arrangements for signal inductances
• CPC Class Codes: H01F 38/00 Adaptations of transformers or inductances for specific applications or functions
• CPC Class Codes: H01F 38/14 Inductive couplings for wireless supply or distribution of electric power using inductive coupling H02J50/10
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2223/6655 Matching arrangements, e.g. arrangement of inductive and capacitive components
• CPC Class Codes: H01L 2223/6672 for integrated passive components, e.g. semiconductor device with passive components only integrated circuits with passive components only per se H01L27/01
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02M 1/0012 Control circuits using digital or numerical techniques in DC/DC converters H02M3/157, H02M3/33515; in DC-AC converters H02M7/53873
• CPC Class Codes: H02M 3/04 by static converters
• CPC Class Codes: H02M 3/1563 : without using an external clock H02M3/158 takes precedence
• CPC Class Codes: H03F 1/02 : Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
• CPC Class Codes: H03F 1/0216 : Continuous control
• CPC Class Codes: H03F 1/0227 : using supply converters
• CPC Class Codes: H03F 1/0238 : using supply converters
• CPC Class Codes: H03F 1/0261 : with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/26 : Modifications of amplifiers to reduce influence of noise generated by amplifying elements
• CPC Class Codes: H03F 1/565 : using inductive elements
• CPC Class Codes: H03F 2200/102 : A non-specified detector of a signal envelope being used in an amplifying circuit
• CPC Class Codes: H03F 2200/105 : A non-specified detector of the power of a signal being used in an amplifying circuit
• CPC Class Codes: H03F 2200/18 : the bias of the gate of a FET being controlled by a control signal
• CPC Class Codes: H03F 2200/294 : the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/387 : A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/432 : Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
• CPC Class Codes: H03F 2200/451 : the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/504 : the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
• CPC Class Codes: H03F 2200/534 : Transformer coupled at the input of an amplifier
• CPC Class Codes: H03F 2200/537 : A transformer being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/541 : Transformer coupled at the output of an amplifier
• CPC Class Codes: H03F 2203/21106 : An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
• CPC Class Codes: H03F 2203/21142 : Output signals of a plurality of power amplifiers are parallel combined to a common output
• CPC Class Codes: H03F 3/19 : with semiconductor devices only
• CPC Class Codes: H03F 3/193 : with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/21 : with semiconductor devices only H03F3/245 takes precedence
• CPC Class Codes: H03F 3/211 : using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/213 : in integrated circuits
• CPC Class Codes: H03F 3/24 : of transmitter output stages
• CPC Class Codes: H03F 3/245 : with semiconductor devices only
• CPC Class Codes: H03F 3/265 : with field-effect transistors only
• CPC Class Codes: H03F 3/45179 : using MOSFET transistors as the active amplifying circuit H03F3/45278 takes precedence
• CPC Class Codes: H03F 3/68 : Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602
• CPC Class Codes: H04B 1/0475 : with means for limiting noise, interference or distortion H04B1/0483 takes precedence
• CPC Class Codes: H04B 1/40 : Circuits
• CPC Class Codes: H04B 1/44 : Transmit/receive switching
• CPC Class Codes: H04B 2001/045 : with means for improving efficiency
• CPC Class Codes: H04L 27/0002 : analog front ends; means for connecting modulators, demodulators or transceivers to a transmission line duplex arrangements H04L5/143
• CPC Class Codes: Y02D 30/70 : in wireless communication networks

Abstract

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

Claims

1. A transmit/receive switch, comprising:

a transmit (TX) port that belongs to a chip, wherein the TX port is for coupling to a radio frequency (RF) transmit signal provided from a power amplifier of the chip;

a receive (RX) port that belongs to the chip, wherein the RX port is for outputting to a low noise amplifier of the chip an RF receive signal ;

an antenna port that belongs to the chip for coupling to an antenna that is external to the chip;

an inductance that is coupled in series with said antenna port and said RX port;

wherein the inductance comprises a wire bond that is connected to a dummy pad of the chip;

wherein the wire bond has a wire bond inductance that is utilized by the transmit/receive switch when operating in a transmit mode and when operating in a receive mode; and

a series combination of capacitance and a field effect transistor (FET) switch coupled in parallel across said inductance, wherein said FET switch having source, drain and gate terminals, the gate terminal operative to receive a control signal for controlling said FET switch.

2. The transmit/receive switch according to claim 1, wherein said switch is rendered conductive in the transmit mode thereby establishing a high impedance parallel resonant circuit of said inductance and said capacitance.

3. The transmit/receive switch according to claim 1, wherein the RF transmit signal is blocked from said RX port by operation of a high impedance parallel resonant circuit of said inductance and said capacitance when said switch is rendered conductive in the transmit mode.

4. The transmit/receive switch according to claim 1, wherein said switch is rendered nonconductive in the receive mode thereby coupling said antenna port and said receive port through said inductance.

5. The transmit/receive switch according to claim 1, further comprising a resistance in series between said transmit port and said antenna port.

6. The transmit/receive switch according to claim 1, wherein said FET switch is fabricated using a semiconductor technology selected from the group consisting of complementary metal oxide semiconductor (CMOS), Gallium Arsenide (GaAs), Silicon Germanium (SiGe) and Gallium Nitride (GaN).

7. The transmit/receive switch according to claim 1, wherein said transmit/receive switch is adapted to transmit and receive signals conforming to a wireless standard selected from the group consisting of 802.11 WLAN, LTE, WiMAX, HDTV, 3G cellular, 4G cellular and DECT.

8. A transmit/receive switch, comprising:

a transmit (TX) port for coupling to a radio frequency (RF) transmit signal;

a receive (RX) port for coupling to an RF receive signal;

an antenna port for coupling to an antenna;

a first transformer balun operative to couple the RF receive signal from said antenna port to said RX port;

a capacitance in series with said first transformer balun;

a field effect transistor (FET) switch coupled in parallel across a primary winding of said first transformer balun; and

a second transformer balun operative to couple the RF transmit signal from said TX port to said antenna port.

9. The transmit/receive switch according to claim 8, wherein said FET switch is rendered conductive in a transmit mode thereby grounding the input to a low noise amplifier (LNA) coupled to said RX port.

10. The transmit/receive switch according to claim 8, wherein said FET switch is rendered conductive in a transmit mode thereby transferring said RF transmit signal from said TX port to said antenna port while blocking the RF transmit signal from said entering said RX port.

11. The transmit/receive switch according to claim 8, wherein said FET switch is rendered conductive in a transmit mode whereby the combined impedance of said capacitance, said FET switch in a conductive state and the reflected impedance of a low noise amplifier (LNA) coupled to said RX port presents a relatively high impedance to said RF transmit signal.

12. The transmit/receive switch according to claim 8, further comprising a matching network coupled between said TX port and a power amplifier circuit.

13. The transmit/receive switch according to claim 8, further comprising a matching network coupled between said RX port and a low noise amplifier.

14. The transmit/receive switch according to claim 8, wherein said FET switch is rendered nonconductive in a receive mode thereby coupling said antenna port and said receive port through said first transformer balun.

15. The transmit/receive switch according to claim 8, further comprising a tuned tank circuit coupled to said first transformer balun for impedance matching to a low noise amplifier (LNA) coupled to said RX port.

16. The transmit/receive switch according to claim 8, wherein said transmit/receive switch is fabricated using a semiconductor technology selected from the group consisting of complementary metal oxide semiconductor (CMOS), Gallium Arsenide (GaAs), Silicon Germanium (SiGe) and Gallium Nitride (GaN).

17. The transmit/receive switch according to claim 8, wherein said transmit/receive switch is adapted to transmit and receive signals conforming to a wireless standard selected from the group consisting of 802.11 WLAN, LTE, WiMAX, HDTV, 3G cellular, 4G cellular and DECT.

18. A transmit/receive switch, comprising:

a transmit (TX) port that belongs to a chip, wherein the TX port is for coupling to a radio frequency (RF) transmit signal provided from a power amplifier of the chip;

a receive (RX) port that belongs to the chip, wherein the RX port is for outputting to a low noise amplifier of the chip an RF receive signal;

an antenna port that belongs to the chip for coupling to an antenna that is external to the chip;

an inductance that is coupled in series with said antenna port and said RX port;

wherein the inductance comprises a wire bond that is connected to a dummy pad of the chip;

wherein the wire bond has a wire bond inductance that is forms with the capacitance a parallel resonant circuit when the transmit/receive switch operates in a transmit mode; and

a series combination of capacitance and a field effect transistor (FET) switch coupled in parallel across said inductance, wherein said FET switch having source, drain and gate terminals, the gate terminal operative to receive a control signal for controlling said FET switch.