Semiconductor device

• US 9,324,848 B2
• Filed: 05/28/2013
• Issued: 04/26/2016
• Est. Priority Date: 05/30/2012
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Sumitomo, Masakiyo, Fukatsu, Shigemitsu
• Primary Examiner(s): Rodela, Eduardo A
• Application Number:
  US14/395,868
• Publication Number:
  US 20150129927A1
• Time in Patent Office: 1,064 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 29/0839 Cathode regions of thyristors
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/66325 controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

A semiconductor device includes a first conductivity-type drift layer, a second conductivity-type base layer formed in a front surface portion of the drift layer, a second conductivity-type collector layer formed in the drift layer and separated from the base layer, gate insulation layers formed on a surface of the base layer, gate electrodes individually formed on the gate insulation layers, an emitter layer formed in a front surface portion of the base layer, an emitter electrode electrically connected to the emitter layer and the base layer, and a collector electrode electrically connected to the collector layer. A rate of change in a gate voltage of a part of the gate electrodes is smaller than a rate of change in a gate voltage of a remainder of the gate electrodes. The emitter layer is in contact with only the gate insulation layers provided with the part of the gate electrodes.

Claims

1. A semiconductor device comprising:

a first conductivity-type drift layer;

a second conductivity-type base layer formed in a front surface portion of the drift layer;

a second conductivity-type collector layer formed in the drift layer and separated from the base layer;

a plurality of gate insulation layers formed on a surface of the base layer;

a plurality of gate electrodes individually formed on the plurality of gate insulation layers;

an emitter layer formed in a front surface portion of the base layer;

an emitter electrode electrically connected to the emitter layer and the base layer; and

a collector electrode electrically connected to the collector layer, wherein

the plurality of gate electrodes are configured such that a rate of change in a gate voltage of each gate electrode in a part of the plurality of gate electrodes is smaller than a rate of change in a gate voltage of each gate electrode in a remainder of the plurality of gate electrodes,

the emitter layer is in contact with each gate insulation layer provided with the part of the plurality of gate electrodes,

the emitter layer is not in contact with each gate insulation layer provided with the remainder of the plurality of gate electrodes,

each gate electrode of the group of the plurality of electrodes is connected to a first resistor, each gate electrode of the remainder of the plurality of gate electrodes being connected to a second resistor, and

a resistance of the second resistor is smaller than that of the first resistor.

2. The semiconductor device according to claim 1, further comprising:

a plurality of trenches reaching the drift layer by penetrating the base layer, the plurality of trenches extending in a predetermined direction, wherein

the collector layer is located on a back surface side of the drift layer, the back surface side being opposite to the front surface portion side,

each gate insulation layer is formed in a wall surface of a corresponding one of the plurality of trenches,

the emitter layer is in contact with a side surface of each of the plurality of trenches provided with the part of the plurality of gate electrodes, and

the emitter layer is not in contact with a side surface of each of the plurality of trenches provided with the remainder of the plurality of gate electrodes.

3. The semiconductor device according to claim 2, wherein

the part of the plurality of gate electrodes alternates with the remainder of the plurality of gate electrodes in a direction perpendicular to the predetermined direction.

4. The semiconductor device according to claim 1, further comprising:

a first conductivity-type cathode layer adjacent to the collector layer.