Semiconductor device
First Claim
1. A semiconductor device comprising:
- a substrate; and
a pixel over the substrate, the pixel comprising;
a transistor comprising;
a channel region comprising In, Ga, Zn and O; and
a gate electrode over the channel region with a first insulating film between the channel region and the gate electrode; and
a capacitor over the substrate, the capacitor comprising;
a first electrode comprising In, Ga, Zn and O; and
a second electrode over the first electrode,wherein regions with high luminance in a circular pattern are observed in a nanobeam electron diffraction pattern of the channel region, andwherein the first electrode comprises a portion which does not overlap the first insulating film.
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Abstract
A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
155 Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate; and a pixel over the substrate, the pixel comprising; a transistor comprising; a channel region comprising In, Ga, Zn and O; and a gate electrode over the channel region with a first insulating film between the channel region and the gate electrode; and a capacitor over the substrate, the capacitor comprising; a first electrode comprising In, Ga, Zn and O; and a second electrode over the first electrode, wherein regions with high luminance in a circular pattern are observed in a nanobeam electron diffraction pattern of the channel region, and wherein the first electrode comprises a portion which does not overlap the first insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a substrate; and a pixel over the substrate, the pixel comprising; a transistor comprising; a first gate electrode over the substrate; a first insulating film over the first gate electrode; a channel region over the first insulating film, the channel region comprising In, Ga, Zn and O; and a second gate electrode over the channel region with a second insulating film between the channel region and the second gate electrode; and a capacitor over the substrate, the capacitor comprising; a first electrode comprising In, Ga, Zn and O; and a second electrode over the first electrode, wherein regions with high luminance in a circular pattern are observed in a nanobeam electron diffraction pattern of the channel region, and wherein the first electrode comprises a portion which does not overlap the first insulating film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification